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Datasheet> All Categories > Discrete semiconductor> The transistor> FS70UM-03
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FS70UM-03

Description
Power Field-Effect Transistor, 70A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size40KB，4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

FS70UM-03 Overview

Power Field-Effect Transistor, 70A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FS70UM-03 Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)70 A
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)70 W
Maximum pulsed drain current (IDM)280 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

FS70UM-03 Preview

MITSUBISHI Nch POWER MOSFET
FS70UM-03
HIGH-SPEED SWITCHING USE
FS70UM-03
OUTLINE DRAWING
10.5MAX.
r
3.2
7.0
Dimensions in mm
4.5
1.3
16
f
3.6
3.8MAX.
1.0
12.5MIN.
0.8
D
0.5
4.5MAX.
2.54
2.54
2.6
q w e
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
¡10V
DRIVE
¡V
DSS ..................................................................................
30V
¡r
DS (ON) (MAX) ..............................................................
14mΩ
¡I
D .........................................................................................
70A
¡Integrated
Fast Recovery Diode (TYP.)
.............
70ns
q
TO-220
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
30
±20
70
280
70
70
280
70
–55 ~ +150
–55 ~ +150
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
L = 30µH
MITSUBISHI Nch POWER MOSFET
FS70UM-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Limits
Min.
30
—
—
2.0
—
—
—
—
—
—
—
Typ.
—
—
—
3.0
11
0.385
36
2400
800
420
35
170
100
120
1.0
—
70
Max.
—
±0.1
0.1
4.0
14
0.49
—
—
—
—
—
—
—
—
1.5
1.78
—
Unit
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 15V, I
D
= 35A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
—
—
—
—
—
—
I
S
= 35A, V
GS
= 0V
Channel to case
I
S
= 35A, dis/dt = –50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
3
2
10
2
7
5
3
2
10
1
7
5
3
2
tw = 10ms
80
100ms
60
1ms
10ms
DC
100ms
40
20
0
0
50
100
150
200
10
0
7
T
C
= 25°C
5
Single Pulse
3
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
V
GS
= 20V 10V 8V
T
C
= 25°C
Pulse Test
7V
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
V
GS
= 20V 10V
8V
DRAIN CURRENT I
D
(A)
80
7V
DRAIN CURRENT I
D
(A)
40
6V
60
P
D
= 70W
30
40
6V
20
5V
20
T
C
= 25°C
Pulse Test
10
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70UM-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
V
GS
= 10V
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
1.6
8
20V
1.2
I
D
= 100A
70A
6
0.8
4
0.4
30A
2
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
DRAIN CURRENT I
D
(A)
T
C
= 25°C
Pulse Test
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
T
C
= 25°C
V
DS
= 10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
V
DS
= 10V
7
Pulse Test
5
4
3
2
10
1
7
5
4
3
2
DRAIN CURRENT I
D
(A)
60
40
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
80
T
C
= 25°C
75°C
125°C
20
0
0
4
8
12
16
20
10
0 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
Tch = 25°C
10
4
f = 1MH
Z
7
V
GS
= 0V
Ciss
Coss
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
t
d(off)
Tch = 25°C
V
DD
= 15V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
r
t
f
2
10
3
7
5
3
2
10
2
7
5
3
2
Crss
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
5
3
2
t
d(on)
3 5 710
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70UM-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
100
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE V
GS
(V)
20
Tch = 25°C
I
D
= 70A
16
V
DS
= 15V
SOURCE CURRENT I
S
(A)
75
12
20V
25V
50
T
C
= 125°C
75°C
25°C
8
4
25
0
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
V
GS
= 10V
I
D
= 1/2I
D
5
Pulse Test
4
3
2
10
0
7
5
4
3
2
10
–1
–50
0
50
100
150
5.0
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5
3
2
10
1
7
5
3
D = 1.0
2
10
0
0.5
7
0.2
P
DM
5
3
0.1
tw
2
0.05
T
10
–1
0.02
7
D
=
tw
5
0.01
T
3
Single Pulse
2
10
–2 –4
10 2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
Feb.1999
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
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