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2SJ399ZF-TL

Description
Power Field-Effect Transistor, 0.2A I(D), 30V, 7.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size101KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SJ399ZF-TL Overview

Power Field-Effect Transistor, 0.2A I(D), 30V, 7.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ399ZF-TL Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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