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2SC2732EC

Description
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size101KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC2732EC Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN

2SC2732EC Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.02 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1000 MHz
Base Number Matches1

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