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2SA1470

Description
TRANSISTOR,BJT,PNP,60V V(BR)CEO,7A I(C),TO-220VAR
CategoryDiscrete semiconductor    The transistor   
File Size35KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

2SA1470 Overview

TRANSISTOR,BJT,PNP,60V V(BR)CEO,7A I(C),TO-220VAR

2SA1470 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)7 A
ConfigurationSingle
Minimum DC current gain (hFE)70
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
surface mountNO
Nominal transition frequency (fT)100 MHz
Base Number Matches1
Ordering number:ENN1972A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1470/2SC3747
60V/7A High-Speed Switching Applications
Applications
· Inductance, lamp drivers.
· Inveters, conveters (strobes, flashes, FLT lighting
circiuts).
· Power amplifiers (high-power car stereos, motor
control).
· High-speed switching (switching regulators, drivers).
Package Dimensions
unit:mm
2041A
[2SA1470/2SC3747]
10.0
3.2
4.5
2.8
3.5
7.2
16.0
· Low saturation votlage.
· Excellent dependence of h
FE
on current.
· Fast switching time.
· Micaless package facilitating mounting.
18.1
Features
5.6
14.0
1.6
1.2
0.75
1 2
3
2.55
2.4
0.7
2.55
( ) : 2SA1470
2.55
2.55
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Conditions
2.4
Ratings
(–)80
(–)60
(–)5
(–)7
(–)10
2
25
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)5V, IC=(–)1A
IC=(–)3.5A, IB=(–)0.175A
70*
100
(–)0.4
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
MHz
V
Unit
mA
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/3277KI/N265KI, TS No.1972-1/4
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