IPF135N03LG datasheet, PDF - EEWORLD Datasheet

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IPF135N03LG: DescriptionOptiMOS3 Power-Transistor; CategoryDiscrete semiconductor The transistor; File Size1MB，13 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPF135N03LG Overview

OptiMOS3 Power-Transistor

IPF135N03LG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G3
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	20 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.0135 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	31 W
Maximum pulsed drain current (IDM)	210 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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IPF135N03LG Related Products

	IPF135N03LG	IPD135N03LG	IPD135N03LG_10	IPS135N03LG	IPU135N03LG
Description	OptiMOS3 Power-Transistor	OptiMOS3 Power-Transistor	OptiMOS3 Power-Transistor	OptiMOS3 Power-Transistor	OptiMOS3 Power-Transistor
Is it Rohs certified?	conform to	conform to	-	conform to	conform to
Maker	Infineon	Infineon	-	Infineon	Infineon
Parts packaging code	TO-252	TO-252AA	-	TO-251	TO-251AA
package instruction	SMALL OUTLINE, R-PSSO-G3	SMALL OUTLINE, R-PSSO-G2	-	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	4	4	-	3	3
Reach Compliance Code	compli	compli	-	compliant	compli
ECCN code	EAR99	EAR99	-	EAR99	EAR99
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	-	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	20 mJ	20 mJ	-	20 mJ	20 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	-	30 V	30 V
Maximum drain current (Abs) (ID)	30 A	30 A	-	30 A	30 A
Maximum drain current (ID)	30 A	30 A	-	30 A	30 A
Maximum drain-source on-resistance	0.0135 Ω	0.0135 Ω	-	0.0135 Ω	0.0135 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	TO-252AA	-	TO-251	TO-251AA
JESD-30 code	R-PSSO-G3	R-PSSO-G2	-	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e3	e3	-	e3	e3
Number of components	1	1	-	1	1
Number of terminals	3	2	-	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	-	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	-	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	31 W	31 W	-	31 W	31 W
Maximum pulsed drain current (IDM)	210 A	210 A	-	210 A	210 A
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	YES	-	NO	NO
Terminal surface	MATTE TIN	MATTE TIN	-	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON
Base Number Matches	1	1	-	1	1
Humidity sensitivity level	-	1	-	1	1

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