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2SA1474-RB

Description
RF Power Bipolar Transistor, 1-Element, Silicon, PNP, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SA1474-RB Overview

RF Power Bipolar Transistor, 1-Element, Silicon, PNP, TO-220AB, TO-220, 3 PIN

2SA1474-RB Parametric

Parameter NameAttribute value
Objectid1417104555
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment15 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)800 MHz
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