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2SA1474E

Description
RF Power Bipolar Transistor, 1-Element, Silicon, PNP, TO-220AB, SC-46, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size256KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SA1474E Overview

RF Power Bipolar Transistor, 1-Element, Silicon, PNP, TO-220AB, SC-46, 3 PIN

2SA1474E Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)800 MHz
Base Number Matches1
Ordering number:EN2526
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1474/2SC3780
Ultrahigh-Definition CRT Display
Video Output Applications
Applications
· Video Output.
· Color TV chroma output.
· Wide-band amp.
Package Dimensions
unit:mm
2010C
[2SA1474/2SC3780]
Features
· High f
T
(f
T
typ=800MHz).
· Small reverse transfer capacitance and excellent high
frequency characteristic
: C
re
=3.0pF (NPN), 4.7pF (PNP).
· Complementary PNP and NPN types.
· Adoption of FBET process.
( ) : 2SA1474
JEDEC : TO-220AB
EIAJ : SC-46
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
E : Emitter
C : Collector
B : Base
Ratings
(–)80
(–)60
(–)4
(–)800
(–)1
1.5
Unit
V
V
V
mA
A
W
W
Tc=50˚C
Tj
Tstg
15
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
Reverse Transfer Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)60V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)50mA
VCE=(–)10V, IC=(–)400mA
VCE=(–)10V, IC=(–)100mA
IC=(–)100mA, IB=(–)10mA
40*
20
800
0.6
(–0.8)
VBE(sat) IC=(–)100mA, IB=(–)10MA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
Cob
Cre
IE=(–)100µA, IC=0
VCB=(–)30V, f=1MHz
VCB=(–)30V, f=1MHz
(–)1.0
(–)80
(–)60
(–)4
3.5
(5.3)
3.0
(4.7)
MHz
V
V
V
V
V
V
pF
pF
pF
pF
Conditions
Ratings
min
typ
max
(–)0.1
(–)1.0
320*
Unit
µA
µA
*: The 2SA1474/2SC3780 are classified by 50mA h
FE
as follows :
40
C
80
60
D
120
100
E
200
160
F
320
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4077TA, TS No.2526-1/4

2SA1474E Related Products

2SA1474E 2SA1474D 2SC3780D 2SC3780E 2SC3780F 2SA1474F 2SA1474C 2SC3780C
Description RF Power Bipolar Transistor, 1-Element, Silicon, PNP, TO-220AB, SC-46, 3 PIN RF Power Bipolar Transistor, 1-Element, Silicon, PNP, TO-220AB, SC-46, 3 PIN RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-220AB, SC-46, 3 PIN RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-220AB, SC-46, 3 PIN RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-220AB, SC-46, 3 PIN RF Power Bipolar Transistor, 1-Element, Silicon, PNP, TO-220AB, SC-46, 3 PIN RF Power Bipolar Transistor, 1-Element, Silicon, PNP, TO-220AB, SC-46, 3 PIN RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-220AB, SC-46, 3 PIN
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 60 100 160 160 40 40
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 140 °C 140 °C 150 °C 150 °C 150 °C 140 °C 140 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP NPN NPN NPN PNP PNP NPN
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W 15 W 15 W 15 W 15 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 800 MHz 800 MHz 800 MHz 800 MHz 800 MHz 800 MHz 800 MHz 800 MHz
Base Number Matches 1 1 1 1 1 1 1 -
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