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2SJ234(L)

Description
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size195KB,7 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SJ234(L) Overview

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

2SJ234(L) Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)2.5 A
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)10 W
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SJ234(L) Related Products

2SJ234(L) 2SJ234(S)
Description Power Field-Effect Transistor, 2.5A I(D), 30V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Power Field-Effect Transistor, 2.5A I(D), 30V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 2.5 A 2.5 A
Maximum drain current (ID) 2.5 A 2.5 A
Maximum drain-source on-resistance 0.7 Ω 0.7 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 10 W 10 W
Maximum pulsed drain current (IDM) 10 A 10 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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