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B4S

Description
0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size220KB,3 Pages
ManufacturerYenyo Technology Co., Ltd.
Websitehttp://www.yenyo.com.tw/
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B4S Overview

0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

YENYO
Surface Mount Bridge Rectifier
Voltage Range 100 to 1000 V
Current 0.5 Ampere
MINI-DIP
C.02(.5)
B1S THRU B10S
Features
¬
Plastic package has Underwriters
Laboratory Flammability Classification
94V-0
¬
High surge current capability
¬
Saves space on printed circuit boards
¬
Glass passivated structure
Mechanical Data
¬
Case: Molded plastic body over passivated
junctions
¬
Terminals: Solderable per MIL-STD-750,
method 2026
¬
Polarity: As marked on body
¬
Mounting position: Any
¬
Weight: 0.122 gram
-
~
.031(0.8)
.019(0.5)
+
~
.275(7) .165(4.2)
MAX .150(3.8)
.043(1.1)
.027(0.7)
.106(2.7)
.090(2.3)
.193(4.9)
.177(4.5)
.067(1.7)
.057(1.3)
.014(.35)
.006(.15)
.051(1.3)
.035(0.9)
.106(2.7)
.090(2.3)
.118(3.0)
MAX
.008(0.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTIC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
A
=40
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 0.5 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Rating for fusing (t < 8.3ms)
Typical junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junctionand Storage
Temperature Range
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
B1S
100
70
100
B2S
200
140
200
B4S
400
280
400
0.5
B6S
600
420
600
B8S
800
560
800
B10S
1000
700
1000
UNIT
V
V
V
A
I
FSM
30
A
V
F
I
R
It
C
J
R
JA
T
J
, T
STG
2
1.0
5.0
250
5
25
85
-55 to + 150
o
V
uA
uA
A
S
pF
C/W
o
2
C
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(2) Thermal Resistance form junction to ambient mounted on P.C.B with 0.5 x 0.5"(13x13mm) copper pads.
1/2
DBD80 , R0 , JAN- 06

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Description 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
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