BT08 Series
8A TRIACs
Main features
Symbol
I
T(RMS)
B
4-Quardrant Triacs (standard & logic level)
Value
8
600
10 to 35
Unit
A
V
mA
V
DRM
/V
RRM
B
B
B
I
GT(Q1)
B
DESCRIPTION
The BT08
series is suitable for use on AC inductive
A1
A2
G
A1
A2
G
loads. These devices intended to be interface directly to
micro-controllers, logic integrated circuits and other low
power gate trigger circuits….
T0-220AB
BT08xx-xxxT
IT0-220AB
BT08xx-xxxTF
Absolute maximum ratings
Symbol
IB
T(RMS)
B
RMS on-state current
( full sine wave ) ,Tmb≦102℃
Non repetitive surge on-state current F = 50Hz
( full sine wave , Tj initial=25℃ )
F = 60Hz
B
Parameter
Value
8
t = 20ms
t = 16.7ms
65
72
21
Tj = 125℃
Tj = 125℃
Tj = 125℃
50
2
0.5
-40 to +150
-40 to +125
Unit
A
I
TSM
B
A
A
2
s
P
P
I
2
t
P
P
dl/dt
I
GM
P
G(AV)
T
stg
T
j
B
B
B
B
B
B
B
I
2
t Value for fusing
t
p
= 10ms
Critical rate of rise of on-state current
F = 120Hz
I
G
= 2 x I
GT
, tr
≦100ns
P
P
B
B
B
B
A/us
A
W
℃
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 20us
April, 2008
Rev.1
1/5
BT08
Electrical characteristics
(T
j
= 25℃, unless otherwise specified)
Symbol
IB
GT
(1)
B
VB
GT
B
I
H
B
(2)
I
L
Test conditions
Quadrant
I - II – III
IV
ALL
I
T
= 100 mA
I
G
= 1.2 I
GT
I - III
II-IV
MAX.
MAX.
MAX.
MAX.
BT08
10
10
25
15
25
35
25
25
50
1.5
25
35
45
35
35
70
35
50
60
Unit
mA
V
mA
mA
VB
D
B
= 12V RL=100 ohm
Static characteristics
Symbol
VB
T
B
(2) I
TM
= 10A
IB
DRM
B
VB
DRM
=VB
RRM
B
B
IB
RRM
B
B
B
Test conditions
Tj = 25℃
tp = 380 us
Tj = 25℃
Tj = 125℃
B
B
MAX.
MAX.
Value
1.65
5
1
Unit
V
uA
mA
Note 1 :
minimum I
GT
is guaranteed at 5% of I
GT
max.
Note 2 :
for both polarities of A2 referenced to A1
Thermal resistance
Symbol
RB
th (j-mb)
B
RB
th (j-a)
B
Parameter
Junction to mounting base
Junction to ambient
Conditions
Full cycle
Half cycle
In free air
Value
2.0(max.)
2.4(max.)
60(typ.)
Unit
K/W
K/W
Rev.1
2/5
京公网安备 11010802033920号
EEWORLD
