BT04 Series
4A TRIACs
Main features
Symbol
I
T(RMS)
B
4-Quardrant Triacs (standard & logic level)
Value
4
500 and 600
5 to 25
Unit
A
V
mA
V
DRM
/V
RRM
B
B
B
I
GT(Q1)
B
DESCRIPTION
The BT04
series is suitable for use on AC inductive
loads. These devices intended to be interface directly to
micro-controllers, logic integrated circuits and other low
power gate trigger circuits….
A1
A2
G
A1
A2
G
T0-220AB
BT04xx-xxxT
Absolute maximum ratings
Symbol
IB
T(RMS)
B
RMS on-state current
( full sine wave ) ,Tmb≦107℃
Non repetitive surge on-state current F = 50Hz
( full sine wave , Tj initial=25℃ )
F = 60Hz
B
IT0-220AB
BT04xx-xxxTF
Value
4
Parameter
Unit
A
I
TSM
B
t = 20ms
t = 16.7ms
25
27
3.1
A
A
2
s
P
P
I
2
t
P
P
dl/dt
I
GM
P
G(AV)
T
stg
T
j
B
B
B
B
B
B
B
I
2
t Value for fusing
t
p
= 10ms
Critical rate of rise of on-state current
F = 120Hz
I
G
= 2 x I
GT
, tr
≦100ns
P
P
B
B
B
B
Tj = 125℃
Tj = 125℃
Tj = 125℃
50
2
0.5
-40 to +150
-40 to +125
A/us
A
W
℃
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 20us
April, 2008
Rev.1
1/5
BT04
Electrical characteristics
(T
j
= 25℃, unless otherwise specified)
Symbol
IB
GT
(1)
B
VB
GT
B
I
H
B
(2)
I
L
Test conditions
Quadrant
I - II – III
IV
ALL
I
T
= 100 mA
I
G
= 1.2 I
GT
I - III
II-IV
MAX.
MAX.
MAX.
MAX.
BT04
05
5
10
10
10
15
10
10
25
1.5
15
15
20
25
25
70
20
20
30
Unit
mA
V
mA
mA
VB
D
B
= 12V RL=100 ohm
Static characteristics
Symbol
VB
T
B
(2) I
TM
= 5A
IB
DRM
B
VB
DRM
=VB
RRM(MAX).
B
IB
RRM
B
B
B
Test conditions
Tj = 25℃
tp = 380 us
Tj = 25℃
Tj = 125℃
B
B
MAX.
MAX.
Value
1.7
5
1
Unit
V
uA
mA
Note 1 :
minimum I
GT
is guaranteed at 5% of I
GT
max.
Note 2 :
for both polarities of A2 referenced to A1
Thermal resistance
Symbol
RB
th (j-mb)
B
RB
th (j-a)
B
Parameter
Junction to mounting base
Junction to ambient
Conditions
Full cycle
Half cycle
In free air
Value
3.0(max.)
3.7(max.)
60(typ.)
Unit
K/W
K/W
Rev.1
2/5
Embedded System
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