MCR100
0.8A SCRs
Main features
Symbol
I
T(RMS)
B
Series
Sensitive Gate / Silicon Controlled Rectifiers
Value
0.8A
400 and 600
200
Unit
A
V
uA
G
A
V
DRM
/V
RRM
B
B
B
K
I
GT(Q1)
B
DESCRIPTION
These devices are intened to be interfaced directly to
microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
Weight : 0.22 gram
K
GA
TO92
Absolute maximum ratings
Symbol
IB
T(RMS)
B
RMS on-state current
( 180° conduction angle )
F = 50Hz
Non repetitive surge on-state current
( 1/2 Cycle,Sine Wave , Tj initial=25℃ ) F = 60Hz
B
Parameter
Value
0.8
t = 10ms
t = 8.3ms
7
8
0.24
30
1
0.1
-40 to +150
-40 to +110
Unit
A
I
TSM
B
A
A
2
s
P
P
I
2
t
P
P
dl/dt
I
GM
P
G(AV)
T
stg
T
j
B
B
B
B
B
B
B
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 10mA di
G
= 0.1A/us
P
P
B
B
t
p
= 10ms
A/us
A
W
℃
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Aprit.2008
Rev.1
1/5
MCR100
Electrical characteristics
(T
j
= 25℃, unless otherwise specified)
Symbol
V
DRM
,V
RRM
IB
GT
(1)
B
VB
GT
B
I
H
B
(2)
I
L
VB
D
B
= 7V RL=100 ohm
I
T
= 50 mA R
GK
=1kΩ
I
G
= 1mA R
GK
=1kΩ
B
B
B
B
Test conditions
MCR100-
6S
400
MAX.
MAX.
MAX.
MAX.
MIN.
80
25
6
400
200
0.8
5
10
75
75
8
600
200
Unit
V
uA
V
mA
mA
V/us
dV/dt (2) V
D
= 67 % V
DRM
R
GK
=1Kω
Tj = 110℃
Static characteristics
Symbol
VB
T
B
(2) I
TM
= 1A
IB
DRM
B
VB
DRM
=VB
RRM
B
B
IB
RRM
B
Test conditions
Tj = 25℃
tp = 380 us
Tj = 25℃
Tj = 110℃
MAX.
MAX.
Value
1.7
10
0.1
Unit
V
uA
mA
Thermal resistance
Symbol
RB
th (j-l)
B
RB
th (j-a)
B
Junction to lead for DC
Junction to ambient
Parameter
Value
80
150
Unit
℃/W
℃/W
2/4
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