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2SD2381

Description
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PFM, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size10KB,2 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SD2381 Overview

Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PFM, 3 PIN

2SD2381 Parametric

Parameter NameAttribute value
Parts packaging codeTO-3PFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SD2381
Silicon NPN Triple Diffused
Application
Color television horizontal deflection output
TO–3PFM
Features
• High breakdown voltage
V
CBO
= 1500 V
1
2
3
1. Base
2. Collector
3. Emitter
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at T
C
= 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
ic(peak)
ic(surge)
P
C
*1
T
j
Tstg
Rating
1500
800
6
3
3.5
10
40
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
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