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2SA719

Description
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
CategoryDiscrete semiconductor    The transistor   
File Size518KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

2SA719 Overview

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

2SA719 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1
2SA719
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-0.5 A, -30 V
PNP Plastic Encapsulated Transistor
FEATURES
TO-92
For low-frequency power amplification
and driver amplification.
G
H
CLASSIFICATION OF h
FE
Product-Rank
2SA719-Q
Range
85~170
2SA719-R
120~240
2SA719-S
170~340
K
A
J
D
B
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
-30
-25
-5
-0.5
625
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min
-30
-25
-5
-
-
85
40
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
200
-
Max
-
-
-
-0.1
-0.1
340
-
-0.6
-1.5
-
15
Unit
V
V
V
μA
μA
Test condition
I
C
= -10μA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10μA, I
C
=0
V
CB
= -20V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -0.15A
V
CE
= -10V, I
C
= -0.5A
I
C
= -0.3A, I
B
= -30mA
I
C
= -0.3A, I
B
= -30mA
V
CE
= -10V, I
C
= -50mA, f=200MHz
V
CB
= -10V, I
E
= 0, f=1MHz
V
V
MHz
pF
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 1 of 3
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