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MT48LC8M16A2BB-7EIT:G

Description
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA60, 8 X 16 MM, LEAD FREE, PLASTIC, FBGA-60
Categorystorage    storage   
File Size2MB,74 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT48LC8M16A2BB-7EIT:G Overview

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA60, 8 X 16 MM, LEAD FREE, PLASTIC, FBGA-60

MT48LC8M16A2BB-7EIT:G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionTFBGA,
Contacts60
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length16 mm
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals60
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
128Mb: x4, x8, x16 SDRAM
Features
SDRAM
MT48LC32M4A2 – 8 Meg x 4 x 4 banks
MT48LC16M8A2 – 4 Meg x 8 x 4 banks
MT48LC8M16A2 – 2 Meg x 16 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
www.micron.com
Features
• PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive edge
of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths (BL): 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge, and
auto refresh modes
• Self refresh mode; standard and low power
• 64ms, 4,096-cycle refresh (commercial & industrial)
• 16ms, 4,096-cycle refresh (Automotive)
• LVTTL-compatible inputs and outputs
• Single +3.3 ±0.3V power supply
Figure 1:
54-Pin TSOP Pin Assignment
(Top View)
x16 x8 x4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
x4 x8 x16
-
-
NC
DQ0
NC
DQ0
V
DD
DQ0
-
V
DD
Q
NC
DQ1
DQ1 DQ2
-
VssQ
NC
DQ3
DQ2 DQ4
-
V
DD
Q
NC
DQ5
DQ3 DQ6
-
VssQ
NC
DQ7
V
DD
-
NC DQML
-
WE#
-
CAS#
-
RAS#
CS#
-
BA0
-
BA1
-
A10
-
A0
-
A1
-
A2
-
A3
-
V
DD
-
-
-
NC
NC
-
NC
DQ1
-
NC
-
NC
Options
• Configurations
32 Meg x 4 (8 Meg x 4 x 4 banks)
16 Meg x 8 (4 Meg x 8 x 4 banks)
8 Meg x 16 (2 Meg x 16 x 4 banks)
• Write recovery (
t
WR)
t
WR = “2 CLK”
1
• Package/Pinout
Plastic package – OCPL
2
54-pin TSOP II (400 mil)
54-pin TSOP II (400 mil) Pb-free
60-ball FBGA (8mm x 16mm)
60-ball FBGA (8mm x 16mm) Pb-free
54-ball VFBGA (8mm x 8mm)
54-ball VFBGA (8mm x 8mm) Pb-free
• Timing (cycle time)
7.5ns @ CL = 3 (PC133)
7.5ns @ CL = 2 (PC133)
6.0ns @ CL = 3 (x16 only)
• Self refresh
Standard
Low power
• Design revision
• Operating temperature range
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Automotive (–40°C to +105°C)
Notes:
1.
2.
3.
4.
Refer to Micron technical note: TN-48-05.
Off-center parting line.
Consult Micron for availability.
x16 only.
Designator
32M4
16M8
8M16
A2
Notes:
-
-
-
-
-
-
-
-
-
-
-
-
-
Vss
DQ15 DQ7
VssQ
-
DQ14
NC
DQ13 DQ6
V
DD
Q
-
DQ12
NC
DQ11 DQ5
VssQ
-
DQ10
NC
DQ9 DQ4
V
DD
Q
-
DQ8
NC
-
Vss
-
NC
DQMH DQM
-
CLK
CKE
-
NC
-
A11
-
A9
-
A8
-
A7
-
A6
-
A5
-
A4
-
Vss
-
-
NC
-
NC
DQ3
-
NC
NC
-
NC
DQ2
-
NC
-
-
DQM
-
-
-
-
-
-
-
-
-
-
-
1. The # symbol indicates signal is active LOW. A dash (-) indicates
x8 and x4 pin function is same as x16 pin function.
TG
P
FB
3
BB
3
F4
4
B4
4
-75
-7E
-6A
None
L
:G
None
IT
3
AT
3
Table 1:
Address Table
32 Meg x 4
16 Meg x 8
4 Meg x 8 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
1K (A0–A9)
8 Meg x 16
2 Meg x 16 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
8 Meg x 4 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
2K (A0–A9,
A11)
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
Table 2:
Key Timing Parameters
CL = CAS (Read) latency
Access Time
Speed
Grade
-6A
-7E
-7E
-75
-75
Clock
Frequency
167 MHz
143 MHz
133 MHz
133 MHz
100 MHz
CL = 2
5.4ns
6ns
CL = 3
5.4ns
5.4ns
5.4ns
Setup
Time
1.5ns
1.5ns
1.5ns
1.5ns
1.5ns
Hold
Time
0.8ns
0.8ns
0.8ns
0.8ns
0.8ns
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_1.fm - Rev. N 1/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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