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FRM234R

Description
Power Field-Effect Transistor, 7A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size333KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FRM234R Overview

Power Field-Effect Transistor, 7A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

FRM234R Parametric

Parameter NameAttribute value
MakerFairchild
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)7 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)21 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON

FRM234R Preview

FRM234D, FRM234R,
FRM234H
June 1998
7A, 250V, 0.70 Ohm, Rad Hard,
N-Channel Power MOSFETs
Package
TO-204AA
Features
Title
RM2
D,
M2
R,
M2
H)
b-
t
A,
0V,
0
m,
d
rd,
an-
wer
OS-
Ts)
utho
ey-
rds
ter-
rpo-
on,
mi-
n-
ctor,
,
0V,
0
m,
d
rd,
• 7A, 250V, RDS(on) = 0.70
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
-
-
-
-
-
Meets Pre-Rad Specifications to 100KRAD(Si)
Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
Performance Permits Limited Use to 3000KRAD(Si)
Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
Survives 2E12 Typically If Current Limited to IDM
• Gamma Dot
• Photo Current
• Neutron
- 4.0nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25m
. Total dose hard-
ness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rang-
ing from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12
with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Symbol
D
G
S
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRM234D, R, H
250
250
7
4
21
±
20
75
30
0.60
21
7
21
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100
µ
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
©2001 Fairchild Semiconductor Corporation
FRM234D, FRM234R, FRM234H Rev. A
FRM234D, FRM234R, FRM234H
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source Breakdown Volts
Gate-Threshold Volts
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero-Gate Voltage
Drain Current
Rated Avalanche Current
Drain-Source On-state Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
Junction-To-Ambient
SYMBOL
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS1
IDSS2
IDSS3
IAR
VDS(on)
RDS(on)
td(on)
tr
td(off)
tf
QG(th)
QG(on)
QGM
VGP
QGS
QGD
VSD
TT
R
θ
jc
R
θ
ja
Free Air Operation
ID = 7A, VGD = 0
I = 7A; di/dt = 100A/
µ
s
VDD = 125V, ID = 7A
IGS1 = IGS2
0
VGS
20
TEST CONDITIONS
VGS = 0, ID = 1mA
VDS = VGS, ID = 1mA
VGS = +20V
VGS = -20V
VDS = 250V, VGS = 0
VDS = 200V, VGS = 0
VDS = 200V, VGS = 0, TC = +125
o
C
Time = 20
µ
s
Vgs = 10V, ID = 7A
VGS = 10V, ID = 4A
VDD = 125V, ID = 7A
Pulse Width = 3
µ
s
Period = 300
µ
s, Rg = 25
0
VGS
10 (See Test Circuit)
MIN
250
2.0
-
-
-
-
-
-
-
-
-
-
-
-
1
16
31
3
3
8
0.6
-
-
-
MAX
-
4.0
100
100
1
0.025
0.25
21
5.15
.70
32
104
ns
176
80
4
66
126
13
12
nc
33
1.8
1200
1.67
60
V
ns
o
C/W
UNITS
V
V
nA
nA
mA
A
V
nc
V
V
DD
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
V
DS
+
CURRENT I
TRANSFORMER
AS
R
L
-
V
GS
= 12V
DUT
0V
R
GS
0V
t
P
50Ω
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
20V
DUT
50Ω
+
V
DD
-
50V-150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FRM234D, FRM234R, FRM234H Rev. A
FRM234D, FRM234R, FRM234H
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
Breakdown Volts
(Note 4, 6)
(Note 5, 6)
Gate-Source
Threshold Volts
(Note 4, 6)
(Note 3, 5, 6)
Gate-Body
Leakage Forward
(Note 4, 6)
(Note 5, 6)
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
(Note 2, 5, 6)
Zero-Gate Voltage
Drain Current
(Note 4, 6)
(Note 5, 6)
Drain-Source
On-state Volts
(Note 1, 4, 6)
(Note 1, 5, 6)
Drain-Source
On Resistance
(Note 1, 4, 6)
(Note 1, 5, 6)
NOTES:
1. Pulse test, 300
µ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 1/19/90 on TA17633 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
SYMBOL
BVDSS
BVDSS
VGS(th)
VGS(th)
IGSSF
IGSSF
IGSSR
IGSSR
IDSS
IDSS
VDS(on)
VDS(on)
RDS(on)
RDS(on)
TYPE
FRM234D, R
FRM234H
FRM234D, R
FRM234H
FRM234D, R
FRM234H
FRM234D, R
FRM234H
FRM234D, R
FRM234H
FRM234D, R
FRM234H
FRM234D, R
FRM234H
TEST CONDITIONS
VGS = 0, ID = 1mA
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS = 20V, VDS = 0
VGS = 20V, VDS = 0
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0
VGS = 0, VDS = 200V
VGS = 0, VDS = 200V
VGS = 10V, ID = 7A
VGS = 16V, ID = 7A
VGS = 10V, ID = 4A
VGS = 14V, ID = 4A
MIN
250
238
2.0
1.5
-
-
-
-
-
-
-
-
-
-
MAX
-
-
4.0
4.5
100
200
100
200
25
100
5.15
7.72
0.700
1.05
UNITS
V
V
V
V
nA
nA
nA
nA
µ
A
µ
A
V
V
©2001 Fairchild Semiconductor Corporation
FRM234D, FRM234R, FRM234H Rev. A
FRM234D, FRM234R, FRM234H
Typical Performance Characteristics
©2001 Fairchild Semiconductor Corporation
FRM234D, FRM234R, FRM234H Rev. A
Typical Performance Characteristics
(Continued)
©2001 Fairchild Semiconductor Corporation
FRM234D, FRM234R, FRM234H Rev. A
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