FRM244R4 datasheet, PDF - EEWORLD Datasheet

FRM244R4: DescriptionPower Field-Effect Transistor, 12A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA; CategoryDiscrete semiconductor The transistor; File Size143KB，4 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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FRM244R4 Overview

Power Field-Effect Transistor, 12A I(D), 250V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	338 ns
Maximum opening time (tons)	320 ns

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