40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
| Parameter Name | Attribute value |
| Maker | Renesas Electronics Corporation |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 40 A |
| Maximum drain-source on-resistance | 0.055 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AE |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 150 W |
| Maximum pulsed drain current (IDM) | 100 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 800 ns |
| Maximum opening time (tons) | 1290 ns |
京公网安备 11010802033920号
EEWORLD
