2SK1698
Silicon N-Channel MOS FET
ADE-208-1314 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
Low drive current
•
4 V gate drive device - - - can be driven from 5 V source.
•
Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
UPAK
2 1
4
3
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1698
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
100
±20
0.3
1.2
0.3
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Notes 1. PW 10 µs, duty cycle 1%
2. When using the alumina ceramic board (12.5
×
20
×
0.7 mm)
3. Marking is “FY”.
2
2SK1698
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol Min
V
(BR)DSS
V
(BR)GSS
I
GSS
100
±20
—
—
1.0
—
—
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse test
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
0.22
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.5
4.5
0.35
35
14
3.5
2
4
17
15
0.9
80
Max
—
—
±10
50
2.0
4.5
6.5
—
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 0.3 A, V
GS
= 0
I
F
= 0.3 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 0.2 A, V
GS
= 10 V,
R
L
= 150
Unit
V
V
µA
µA
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 0.2 A, V
GS
= 10 V *
1
I
D
= 0.2 A, V
GS
= 4 V *
1
I
D
= 0.2 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
V
GS(off)
R
DS(on)
See characteristic curve of 2SK1337.
3
2SK1698
Power vs. Temperature Derating
1.5
Channel Dissipation Pch (W)
Maximum Safe Operation Area
5
3
Drain Current I
D
(A)
1
µ
s
µ
s
10
100
s
1.0
PW
0.3
ar
(o ea
n)
DC
1
O
is per
lim at
ite ion
d in
by th
R is
0.1
0.03
0.01
0.5
O
pe
ra
tio
n
=
10
m
s
m
(1
DS
o
sh
t)
=
25
°C
)
(T
c
Ta = 25°C
1
3
10
0
50
100
150
0.005
0.1
0.3
30
100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
4
2SK1698
Package Dimensions
As of January, 2001
Unit: mm
4.5
±
0.1
0.4
1.8 Max
φ
1
1.5
±
0.1
0.44 Max
(2.5)
(1.5)
1.5 1.5
3.0
0.8 Min
0.44 Max
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
(0.4)
0.53 Max
0.48 Max
2.5
±
0.1
4.25 Max
UPAK
—
Conforms
0.050 g
(0.2)
5
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