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2SK1772HYUL

Description
Power Field-Effect Transistor, 1A I(D), 30V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size101KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SK1772HYUL Overview

Power Field-Effect Transistor, 1A I(D), 30V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK1772HYUL Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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