2SC4618 datasheet, PDF - EEWORLD Datasheet

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2SC4618: DescriptionNPN Silicon General Purpose Transistor; CategoryDiscrete semiconductor The transistor; File Size437KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SC4618 Overview

NPN Silicon General Purpose Transistor

2SC4618 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	56
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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2SC4618

Elektronische Bauelemente

0.05A , 40V

NPN Silicon General Purpose Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

High Voltage and Current.

High DC Current Gain.

Complementary to 2SC4738.

A

M

3

SOT-523

3

Application

General Purpose Amplification.

1

Top View

2

C B

1

2

K

E

L

CLASSIFICATION OF h

FE

Product-Rank

Range

Marking

2SC4618-N

56~120

AN

2SC4618-P

82~180

AP

2SC4618-Q

120~270

AQ

F

G

REF.

A

B

C

D

E

F

D

H

J

Millimeter

Min.

Max.

-

0.1

0.55 REF.

0.1

0.2

-

0.5 TYP.

0.25

0.325

PACKAGE INFORMATION

Package

SOT-523

MPQ

3K

LeaderSize

7’ inch

Millimeter

Min.

Max.

1.5

1.7

1.45

1.75

0.75

0.85

0.7

0.9

1.1

0.15

0.25

REF.

G

H

J

K

L

M

Collector

3

1

Base

Emitter

2

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction & Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

J

, T

STG

Ratings

40

25

5

50

150

833

150, -55 ~ 150

Unit

V

mA

mW

° /W

C

℃

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage *

Transition frequency

Collector output capacitance

http://www.SeCoSGmbH.com/

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

C

ob

Min.

40

25

5

-

56

-

150

-

Typ.

-

Max.

-

0.5

270

0.3

-

2.2

Unit

V

μA

V

MHz

pF

Test Conditions

I

C

=50μA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=50μA, I

C

=0

V

CB

=24V, I

E

=0

V

EB

= 3V, I

C

=0

V

CE

=6V, I

C

=1mA

I

C

=10mA, I

B

=1mA

V

CE

=6V, I

C

=1mA, f=100MHz

V

CB

=6V, I

E

=0, f=1MHz

Any changes of specification will not be informed individually.

24-Feb-2011 Rev. B

Page 1 of 2

2SC4618 Related Products

	2SC4618	2SC4618_11
Description	NPN Silicon General Purpose Transistor	NPN Silicon General Purpose Transistor

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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