3DD13003B datasheet, PDF - EEWORLD Datasheet

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3DD13003B: DescriptionNPN Plastic-Encapsulated Elektronische Bauelemente Transistor; CategoryDiscrete semiconductor The transistor; File Size517KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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3DD13003B Overview

NPN Plastic-Encapsulated Elektronische Bauelemente Transistor

3DD13003B Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Base Number Matches	1

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3DD13003B

Elektronische Bauelemente

1.5A , 700V

NPN Plastic-Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Power switching applications

A

B

D

TO-92

REF.

A

B

C

D

E

F

G

H

J

K

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

-

2.42

2.66

0.36

0.76

Collector

2

3

Base

E

C

F

G

H

1

Emitter

J

1

Emitter

2

Collector

3

Base

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Rating

700

400

9

1.5

900

150, -55~150

Unit

V

A

mW

°

C

ELECTRICAL CHARACTERISTICS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

Emitter Cut – Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Storage time

Fall time

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE

V

CE(sat)1

V

CE(sat)2

V

BE(sat)

f

T

t

S

t

F

Min.

700

400

9

-

20

-

4

-

Typ.

-

Max.

-

100

50

10

30

3

0.8

1

-

4

0.7

Unit

V

µA

Test Condition

I

C

=1mA, I

E

=0

I

C

=10mA, I

B

=0

I

E

=1mA, I

C

=0

V

CB

=700V, I

E

=0

V

CE

=400V, I

B

=0

V

EB

=7V, I

C

=0

V

CE

=10V, I

C

=400mA

I

C

=1.5A, I

B

=500mA

I

C

=0.5A, I

B

=100mA

I

C

=0.5A, I

B

=100mA

V

CE

=10V, I

C

=100mA, f =1MHz

I

B1

= -I

B2

=0.2A

I

C

=1A

V

MHz

µs

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Jun-2011 Rev. A

Page 1 of 2

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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