BAV100 datasheet, PDF - EEWORLD Datasheet

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BAV100: Description0.2 A, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size171KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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BAV100 Overview

0.2 A, SILICON, SIGNAL DIODE

BAV100 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SECOS
Parts packaging code	MELF
package instruction	ROHS COMPLIANT, HERMETIC SEALED, GLASS, MINIMELF-2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LELF-R2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.5 W
Maximum repetitive peak reverse voltage	250 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BAV100 ~ BAV103

Elektronische Bauelemente

Surface Mount Small Signal Switching Diode

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



SOD-80 (Mini-Melf)



SOD-80 (Mini-MELF) Package

Surface Device Type Mounting

Hermetically Sealed Glass

Compression Bonded Construction

All External Surfaces Are Corrosion Resistant

And Terminals Are Readily Solderable

RoHS Compliant

Matte Tin (Sn) Lead Finish

Color band Indicates Negative Polarity

B

C

A

C

REF.

ELECTRICAL SYMBOL

Cathode

Anode

A

B

C

Millimeter

Min.

Max.

3.30

3.70

1.40

1.60

0.28

0.50

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted)

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non repetitive Peak Forward Current

Pulse Width = 1.0 Second

Pulse Width = 1.0



second

Power Dissipation

Thermal Resistance Junction to

Ambient

Junction, Storage Temperature

Symbol

V

RRM

I

F(AV)

I

FSM

P

D

R

θJA

T

J

, T

STG

Ratings

250

200

1.0

4.0

500

350

200, -65 ~ +200

Unit

V

mA

A

mW

°C

/ W

°C

These ratings are limiting values above which the serviceability of the diode may be impaired.

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameters

BAV100

Breakdown Voltage

BAV101

BAV102

BAV103

BAV100

Reverse Leakage Current

BAV101

BAV102

BAV103

Forward Voltage

Capacitance

Reverse Recovery Time

V

F

C

T

RR

I

R

B

V

Symbol

Min.

60

120

200

250

-

Max.

-

100

1.0

5.0

50

Unit

V

Test Conditions

I

R

= 100



A

V

R

= 50V

nA

V

R

= 100V

V

R

= 150V

V

R

= 200V

V

pF

nS

I

F

= 100mA

V

R

= 0V, f = 1MHz

I

F

= I

R

= 30 mA,

I

RR

= 3mA, R

L

= 100

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Aug-2010 Rev. A

Page 1 of 2

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