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BC847BV

Description
100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size579KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

BC847BV Overview

100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847BV Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1
BC847BV
Dual NPN Transistors
Elektronische Bauelemente
RoHS Compliant Product
Plastic-Encapsulate Transistors
SOT-563
.051(1.30)
.043(1.10)
.002(0.05)
.000(0.00)
FEATURES
*
Epitaxial Die Construction
*
Complementary PNP Type Available
(BC857BV)
*
Ultra-Small Surface Mount Package
.012(0.30)
.004(0.10)
.067(1.70)
.059(1.50)
.022(0.55)
.018(0.45)
.011(0.27)
.007(0.17)
Marking:K4V
.067(1.70)
.059(1.50)
7
o
REF.
.006(0.16)
.004(0.09)
.024(0.60)
.021(0.525)
MAXIMUM RATINGS* T
A
=25.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θ
JA
T
J
T
stg
unless otherwise noted
Parameter
Dimensions in inches and (millimeters)
Value
50
45
6
0.1
0.15
833
150
-55-150
o
7
o
RE .
F
Units
V
V
V
A
W
C/W
o
o
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal Resistance. Junction to Ambient Air
Junction Temperature
Storage Temperature
C
C
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Output
capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
NF
unless otherwise
Test
conditions
I
C
=10µA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1µA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V,I
C
=2mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
V
CE
=5V,I
C
=2mA
V
CE
=5V,I
C
=10mA
specified)
MIN
50
45
6
15
100
200
450
100
300
700
900
580
100
4.5
10
660
700
770
mV
TYP
MAX
UNIT
V
V
V
nA
nA
mV
mV
MHz
pF
dB
V
CE
=5V,I
C
=10mA,f= 100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,Rs=2kΩ,
f=1kHz,BW=200Hz
Noise Figure
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
23-Mar-2007
Rev. A
Page 1 of
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