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0405SC-1000M_10

Description
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
File Size210KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet View All

0405SC-1000M_10 Overview

1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

0405SC-1000M Rev F
0405SC-1000M
1000Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-1000M is a
Common Gate N-Channel Class AB SILICON
CARBIDE STATIC INDUCTION TRANSISTOR (SIT)
capable of
providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is
designed for use in High Power Amplifiers supporting applications such as UHF
Weather Radar and Long Range Tracking Radar.
The device is an addition to
a series of High Power Silicon Carbide Transistors from Microsemi PPG.
CASE OUTLINE
55ST FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (V
DSS
)
Gate-Source (V
GS
)
Temperatures
Storage Temperature
Operating Junction Temperature
250V
-1V
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
I
dss
I
gss
θ
JC1
CHARACTERISTICS
Drain-Source Leakage Current
Gate-Source Leakage Current
Thermal Resistance
TEST CONDITIONS
V
GS
= -20V, V
DG
= 125V
V
GS
= -20V, V
DS
= 0V
MIN
TYP
MAX
750
50
0.15
UNITS
µA
µA
ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, I
dq(ave)
= 250 mA, Freq = 406, 425, 450 MHz,
G
PG
P
in
η
d
ψ
Po +1dB
Vgs
Rev F May 2010
Common Gate Power Gain
Input Power
Drain Efficiency
Load Mismatch
Power Output – Higher Drive
Gate source Voltage
P
out
= 1000 W, Pulsed
Pulse Width = 300us, DF = 10%
F = 450 MHz, P
out
=1000W
F = 406 MHz, P
out
= 1000W
F = 450 MHz, Pin = 180 W
Set for Idq(ave) = 150mA
8
50
8.5
140
155
10:1
dB
W
%
W
Volts
1100
3.0
10.0
Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi..com
or contact our factory direct.
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