Power Field-Effect Transistor, 48A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
| Parameter Name | Attribute value |
| Maker | Fairchild |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 300 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V |
| Maximum drain current (ID) | 48 A |
| Maximum drain-source on-resistance | 0.022 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 144 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| NDB6051L86Z | NDB6051L99Z | NDB6051S62Z | |
|---|---|---|---|
| Description | Power Field-Effect Transistor, 48A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Power Field-Effect Transistor, 48A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Power Field-Effect Transistor, 48A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Maker | Fairchild | Fairchild | Fairchild |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 300 mJ | 300 mJ | 300 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V | 50 V | 50 V |
| Maximum drain current (ID) | 48 A | 48 A | 48 A |
| Maximum drain-source on-resistance | 0.022 Ω | 0.022 Ω | 0.022 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 144 A | 144 A | 144 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
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