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1N4500_10

Description
0.0003 A, 80 V, SILICON, SIGNAL DIODE, DO-7
Categorysemiconductor    Discrete semiconductor   
File Size46KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N4500_10 Overview

0.0003 A, 80 V, SILICON, SIGNAL DIODE, DO-7

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
SWITCHING DIODE
– METALLURGICALLY BONDED
– HERMETICALLY SEALED
– DOUBLE PLUG CONSTRUCTION
Qualified per MIL-PRF-19500/403
DEVICES
QUALIFIED LEVELS
1N4500
JAN
JANTX
MAXIMUM RATING AT 25°C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 1S:
Surge Current A, sine 1μS:
Leakage Current: 100nA
DC ELECTRICAL CHARACTERISTICS
V
F
Ambient
(°C)
25
25
25
25
25
I
F
mA
.250
1
10
20
300
Min
V
0.47
0.52
0.64
0.67
--
Max
V
0.56
0.60
0.72
0.77
1.10
DO-35
Ambient
(°C)
25
I
R
V
R
V(dc)
75
Min
μA
--
Max
nA
100
Ambient
(°C)
25
V
BR
I
R
μA
100
Min
V
80
Max
V
--
-65°C to +175°C
-65°C to +200°C
0.5A
4A
75V, T
A
= +25°C
NOTE:
(1) Derate 2.0mAdc/°C for TA > =25°C
AC ELECTRICAL CHARACTERISTICS AT 25°C
Min
Capacitance @ 0V
I
F
= I
R
= 10mA
R
L
= 100 ohms
--
--
Max
4.0
6.0
Unit
pF
ns
LDS-0154 Rev. 1 (100198)
Page 1 of 2

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