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802_07

Description
35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size507KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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802_07 Overview

35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

802_07 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current35 A
stateACTIVE
packaging shapeSQUARE
Package SizeFLANGE MOUNT
Terminal formUNSPECIFIED
terminal coatingTIN LEAD
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureBRIDGE, 4 ELEMENTS
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase1
Maximum repetitive peak reverse voltage50 V
Maximum non-repetitive peak forward current250 A
802(e3) and 803(e3) series
Available
Single Phase Ultrafast Bridge Rectifiers
DESCRIPTION
This series of high-current single-phase bridge rectifiers are constructed with hermetically
sealed rectifiers built with the same design and construction techniques used in military
applications for the upmost in reliability. These include voidless glass encapsulation and
internal "Category 1" metallurgical bonds. These 35A ultrafast rectifier bridges are available in
multiple working peak reverse voltage ratings per leg.
Important:
For the latest information, visit our website
http://www.microsemi.com.
(Actual appearance may vary)
FEATURES
Current ratings to 35 amps
V
RWM
from 50 to 150 volts (see
part nomenclature
for all options)
150 ºC junction temperature
Surge ratings to 25 amps
Recovery times to 50 ns
MIL-PRF-19500 similarity
RoHS compliant versions available
MA and MB
Package
APPLICATIONS / BENEFITS
Fuse-in-glass diodes design
Electrically isolated aluminum case
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case:
Thermal Resistance Junction-to-Ambient:
Forward Surge Current (Peak):
@ T
C
= 100 ºC
Maximum Average DC Output Current:
@ T
C
= 55 ºC
Maximum Average DC Output Current:
@ T
C
= 100 ºC
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJC
R
ӨJA
I
FSM
I
O
I
O
Value
-65 to +150
2.0
4.0
20
25
250
125
35
22.5
20
16
260
Unit
ºC
ºC/W
ºC/W
A
A
A
o
802
803
802
803
802
803
802
803
802
803
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
C
RF01100, Rev A, (12/19/13)
©2013 Microsemi Corporation
Ph: 949-380-6100
sales.support@microsemi.com
Page 1 of 7
One Enterprise, Aliso Viejo, CA 92656

802_07 Related Products

802_07 802-3 802-4 803-3
Description 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifier Diode, 1 Phase, 35A, 150V V(RRM), Silicon 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals 4 4 4 4
Number of components 4 4 4 4
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Phase 1 1 1 1
Maximum repetitive peak reverse voltage 50 V 50 V 150 V 50 V
Maximum non-repetitive peak forward current 250 A 250 A 250 A 250 A
Maximum average input current 35 A 35 A - 35 A
state ACTIVE ACTIVE - ACTIVE
packaging shape SQUARE SQUARE - SQUARE
Package Size FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
terminal coating TIN LEAD TIN LEAD - TIN LEAD
Packaging Materials UNSPECIFIED UNSPECIFIED - UNSPECIFIED
structure BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS
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