BCP195 datasheet, PDF - EEWORLD Datasheet

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BCP195: DescriptionMedium Power Transistor; CategoryDiscrete semiconductor The transistor; File Size527KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BCP195 Overview

Medium Power Transistor

BCP195 Parametric

Parameter Name	Attribute value
Maker	SECOS
Reach Compliance Code	compli

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PNP

Silicon Planar

Medium Power

Transistor

RoHS Compliant Product

BCP195

SOT-89

Description

The BCP195 is designed for medium power

amplifier applications.

1

2

3

1.BASE

Features

* 1Amp Continuous Current

* -60V VCEO

* Complementary TO BCP194

2.COLLECTOR

3.EMITTER

REF.

A

B

C

D

E

F

Min.

4.4

4.05

1.50

1.30

2.40

0.89

Millimeter

Max.

4.6

4.25

1.70

1.50

2.60

1.20

REF.

G

H

I

J

K

L

M

Min.

Max.

3.00 REF.

1.50 REF.

0.40

0.52

1.40

1.60

0.35

0.41

5 q TYP.

0.70 REF.

Millimeter

Absolute Maximum Ratings at Ta=25 C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Total Power Dissipation

Operating Junction and Storage Temperature

o

Parameter

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

C

I

B

P

D

T

J

,T

STG

-80

-60

-5

-1

-2

-200

1

+150,-55 ~ +150

Value

Unit

V

A

mA

W

o

C

Electrical Characteristics (Ta=25 C, unless otherwise stated)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Saturation Cut-off Current

Collector-Emitter Saturation Voltage

Output Capacitance

Base-Emitter Voltage

DC Current Gain

Transition Frequency

Parameter

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

I

CES

V

CE(sat)

1

V

CE(sat)

2

C

ob

V

BE(sat)

V

BE(on)

h

FE1

h

FE2

h

FE3

h

FE4

f

T

Min.

-80

-60

-5

-

100

80

15

150

Typ. Max.

-

-100

-0.3

-0.6

10

-1.2

-1

-

300

-

Unit

V

nA

V

pF

V

MHz

I

C

=-100µA, I

E

=0

I

C

=-10mA, I

B

=0

I

E

=-100µA, I

C

=0

V

CB

=-60V, I

E

=0

V

EB

=-4V, I

C

=0

V

CES

=-60V

I

C

=-500mA, I

B

=-50mA

I

C

=-1A, I

B

=-100mA

V

CB

=-10V, f=1MHz,I

E

=0

I

C

=-1A, I

B

=-100mA

V

CE

=-5V,I

B

=-1A

V

CE

=-5V, I

C

=-1mA

V

CE

=-5V, I

C

=-500mA

V

CE

=-5V, I

C

=-1A

V

CE

=-5V, I

C

=-2A

V

CE

=-10V,I

C

=-50mA, f=100MHz

Test Conditions

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2003 Rev.B

Page 1 of 2

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