BCP194 datasheet, PDF - EEWORLD Datasheet

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BCP194: DescriptionPlanar Medium Power Transistor; CategoryDiscrete semiconductor The transistor; File Size596KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BCP194 Overview

Planar Medium Power Transistor

BCP194 Parametric

Parameter Name	Attribute value
Maker	SECOS
Reach Compliance Code	compli

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BCP194

Elektronische Bauelemente

NPN Silicon

Planar

Medium Power

Transistor

RoHS Compliant Product

Description

The BCP194 is designed for medium

power amplifier applications.

SOT-89

Features

* 1 Amp Continuous Current

* 60 Volt V

CEO

* Complementary to BCP195

REF.

A

B

C

D

E

F

Millimeter

Min.

Max.

4.4

4.6

4.05

4.25

1.50

1.70

1.30

1.50

2.40

2.60

0.89

1.20

REF.

G

H

I

J

K

L

M

Millimeter

Min.

Max.

3.00 REF.

1.50 REF.

0.40

0.52

1.40

1.60

0.35

0.41

5 q TYP.

0.70 REF.

Absolute Maximum Ratings at T

A

=25 C

Symbol

V

CBO

V

CEO

V

EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Total Power Dissipation

Junction and Storage Temperature

o

Parameter

Value

80

60

5

1

2

200

1

-55~+150

Units

V

A

mA

W

O

I

C

I

B

P

D

T

J,

T

stg

C

ELECTRICAL CHARACTERISTICS Tamb=25

C

unless otherwise specified

Typ.

Symbol

Min

Collector-Base Breakdown Voltage

80

BV

CBO

-

*BV

CEO

Collector-Emitter Breakdown Voltage

60

-

BV

EBO

Emitter-Base Breakdown Voltage

5

-

Collector-Base Cutoff Current

I

CBO

-

Emitter-Base Cutoff Current

-

I

CES

-

Emitter-Base Cutoff Current

-

I

EBO

*V

CE

(sat)1

-

Collector Saturation Voltage

-

*V

CE

(sat)2

-

*V

BE

(sat)

Base-Emitter Saturation Voltage

-

*V

BE

(on)

-

*h

FE1

100

*h

FE2

100

-

DC Current Gain

*h

FE3

80

-

30

*h

FE4

Gain-Bandwidth Product

fT

-

150

-

Output Capacitance

-

C

ob

* Measured under pulse condition. Pulse width

≦

300

µ

s, Duty Cycle

≦

2%

Parameter

http://www.SeCoSGmbH.com

Max

-

100

0.25

0.5

1.1

1

-

300

-

10

Unit

V

nA

V

Test Conditions

I

C

=100

µA,I

E

=0

I

C

=10mA,I

B

=0

I

E

=100µA,I

C

=0

V

CB

= 60V,I

E

=0

V

CES

=60V

V

EB

=4V,I

C

=0

I

C

=500mA,I

B

=50mA

I

C

=1A,I

B

=100mA

I

C

=1A,I

B

=100mA

I

C

=1A,V

CE

=5V

V

CE

= 5 V, I

C

=1mA

V

CE

= 5 V, I

C

=500mA

V

CE

= 5 V, I

C

=1A

V

CE

= 5 V, I

C

=2 A

V

CE

= 10V, I

C

=50m A,f=100MHz

V

CB

=10V , f=1MHz,I

E

=0

MH z

pF

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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