BCP53 datasheet, PDF - EEWORLD Datasheet

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BCP53: Description1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size295KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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BCP53 Overview

1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BCP53 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SECOS
package instruction	SOT-223, 4 PIN
Reach Compliance Code	compli

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BCP53

Elektronische Bauelemente

-1A , -100V

PNP Silicon Medium Power Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



Collector-Emitter Voltage:V

CEO

= -80V

Complementary types: BCP56 (NPN)

A

M

SOT-223

CLASSIFICATION OF h

FE (2)

Product-Rank

Range

BCP53-10

63~160

BCP53-16

100~250

4

Top View

CB

1

2

3

K

E

L

D

PACKAGE INFORMATION

Package

SOT-223

MPQ

2.5K

LeaderSize

13’ inch

REF.

A

B

C

D

E

F

G

H

J

Millimeter

Min.

Max.

6.20

6.70

7.30

3.30

3.70

1.42

1.90

4.50

4.70

0.60

0.82

REF.

G

H

J

K

L

M

Millimeter

Min.

Max.

-

0.10

-

0.25

0.35

-

2.30 REF.

2.90

3.10

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

D

T

j

Ratings

-100

-80

-5

-1

1.5

150

Unit

V

A

W

°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

1

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

(1)

h

FE

(2)

h

FE

(3)

V

CE(sat)

V

BE(on)

f

T

Min.

-100

-80

-5

Max.

Unit

V

nA

Test Conditions

I

C

= -0.1mA , I

E

=0

I

C

= -1mA, I

B

=0

I

E

= -10μA, I

C

=0

V

CB

= -30V, I

E

=0

V

CE

= -2V, I

C

= -5mA

V

CE

= -2V, I

C

= -150mA

V

CE

= -2V, I

C

= -500mA

I

C

= -500mA, I

B

= -50mA

V

CE

= -2V, I

C

= -500mA

V

CE

= -5V, I

C

= -10mA, f=100MHZ

-100

63

40

250

-0.5

-1

100

Collector-emitter saturation voltage

1

Base-emitter voltage

1

Transition frequency

Note:

1.

V

MHz

Pulse Test: Pulse Width≦380us, Duty Cycle≦2%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Jan-2011 Rev. B

Page 1 of 2

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