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BCPA94

Description
PNP Silicon Epitaxial Planar Transistor
File Size228KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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BCPA94 Overview

PNP Silicon Epitaxial Planar Transistor

BCPA94
Elektronische Bauelemente
-0.5 A, -400 V
PNP Silicon Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The BCPA94 is designed for application requires high voltage.
SOT-89
FEATURES
High Voltage:V
CEO
=400V (min) at I
C
=1mA
High Current gain:I
C
=300mA at 25°C
Complementary with BCPA44
MARKING
A94

B
C
E
Date Code
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
-400
-400
-6
-0.5
1
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter current
Emitter cut-off current
DC current gain *
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)
Min.
-400
-400
-6
-
-
-
40
50
45
20
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-500
-100
-
300
-
-
-350
-500
-750
-750
Unit
V
V
V
nA
nA
nA
Test Conditions
I
C
= -100A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100A, I
C
=0
V
CB
= -400V, I
E
=0
V
CE
= -400V, V
BE
=0
V
EB
= -6V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -1mA, I
B
= -0.1mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
mV
mV
* Pulse Test: Pulse Width
380μs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Jun-2010
Rev. B
Page 1 of 2

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