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BCW68

Description
PNP Plastic-Encapsulate Transistors
File Size226KB，4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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BCW68 Overview

PNP Plastic-Encapsulate Transistors

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BCW68
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
PNP Plastic-Encapsulate Transistors
SOT-23
A
3
3
FEATURES
L
Complementary to BCW66.
COLLECTOR
Top View
1
2
C B
1
2
3
1
BASE
K
E
D
MARKING:
BCW68F:DF
BCW68G:DG
BCW68H:DH
F
G
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
H
J
REF.
REF.
G
H
J
K
L
2
EMITTER
A
B
C
D
E
F
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction & Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATINGS
-60
-45
-5
-0.8
0.33
150, -55~150
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-off Current
h
FE1
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
BCW68F
BCW68G
BCW68H
BCW68F
BCW68G
BCW68H
BCW68F
BCW68G
BCW68H
BCW68F
BCW68G
BCW68H
V
CE(sat)
V
BE(sat)
f
T
C
OB
C
IB
MIN.
-60
-45
-5
TYP.
MAX.
UNIT
V
V
V
μA
μA
TEST CONDITIONS
I
C
=-10μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-45V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-10V, I
C
=-0.1mA
-0.02
-0.02
35
50
80
75
120
180
100
160
250
35
60
100
h
FE2
DC Current Gain
h
FE3
V
CE
=-1V, I
C
=-10mA
250
400
630
V
CE
=-1V, I
C
=-100mA
h
FE4
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Input Capacitance
V
CE
=-2V, I
C
=-500mA
-0.3
-0.7
-1.25
-2
200
6
60
V
V
V
V
MHz
pF
pF
I
C
=-100mA, I
B
=-10mA
I
C
=-500mA, I
B
=-50mA
I
C
=-100mA, I
B
=-10mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-50mA,f=20MHz
V
CB
=-10V, I
E
=0,f=1MHz
V
EB
=-0.5V,I
E
=0,f=1MHz
27-Oct-2009 Rev. A
Page 1 of 3

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