BCX51 datasheet, PDF - EEWORLD Datasheet

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BCX51: Description1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243; CategoryDiscrete semiconductor The transistor; File Size289KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BCX51 Overview

1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243

BCX51 Parametric

Parameter Name	Attribute value
Maker	SECOS
Reach Compliance Code	compliant
Base Number Matches	1

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Elektronische Bauelemente

PNP Transistors

Plastic-Encapsulate Transistors

RoHS Compliant Product

BCX51

1

2

3

4.4~4.6

1.4~1.8

SOT-89

1.BASE

2.COLLECTOR

1.4~1.6

Features

Power dissipation

P

CM:

Collector current

I

CM:

Collector-base voltage

V

(BR)CBO

:

0.5

-1

-45

3.EMITTER

3.94~4.25

W (Tamb=25 C)

A

V

o

0.36~0.56

0.9~1.1

1.5Ref.

2.9~3.1

0.32~0.52

2.3~2.6

0.35~0.44

Dimensision in Millimeter

Operating and storage junction temperature range

T

J

, T

stg

: -55

o

C to +150 C

ELECTRICAL CHARACTERISTICS (Tamb=25

o

C

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

o

unless

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

otherwise

Test

specified)

MIN

-45

-5

-0.1

MAX

UNIT

V

µA

conditions

Ic=-100µA, I

E

=0

I

C

= -1mA , I

B

=0

I

E

=-10µA, I

C

=0

V

CB

=-30V, I

E

=0

V

EB

=-5V, I

C

=0

DC current gain

BCX51

BCX51-10

BCX51-16

h

FE(1)

V

CE

=-2V, I

C

=-150mA

63

100

63

40

250

160

250

h

FE(2)

h

FE(3)

Collector-emitter saturation voltage

Base-emitter

voltage

V

CE(sat)

V

BE(ON)

V

CE

=-2V, I

C

=- 5mA

V

CE

=-2V, I

C

=- 500mA

I

C

=-500 mA, I

B

= -50mA

I

C

= -500 mA, V

CE

=-2V

V

CE

= -5V, I

C

=-10mA

-0.5

-1

V

Transition frequency

f

T

f =

100MHz

50

MHz

DEVICE MARKING

BCX51=AA

BCX51-10=AC

BCX51-16=AD

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of

1

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