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BD13003B

Description
NPN Plastic Encapsulated Transistor
File Size375KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

BD13003B Overview

NPN Plastic Encapsulated Transistor

BD13003B
Elektronische Bauelemente
1.5A , 700V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power Switching Applications
TO-126
CLASSIFICATION OF t
s
Product-Rank
Range
Product-Rank
Range
BD3DD13003-A1
2-2.5 (µs)
BD3DD13003-B1
3-3.5 (µs)
BD3DD13003-A2
A
2.5-3 (µs)
F
E
B
BD3DD13003-B2
3.5-4 (µs)
N
L
M
K
J
H
C
D
Collector
G
2
REF.
1
Base
3
Emitter
A
B
C
D
E
F
G
Millimeter
Min.
Max.
7.40
7.80
2.50
2.90
10.60
11.00
15.30
15.70
3.70
3.90
3.90
4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
1.10
1.50
0.45
0.60
0.66
0.86
2.10
2.30
1.17
1.37
3.00
3.20
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
700
400
9
1.5
1.5
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
Storage time
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
t
f
t
S
Min.
700
400
9
-
-
-
20
5
-
-
5
-
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
0.5
1
30
-
0.6
1.2
-
0.5
4
Unit
V
V
V
mA
mA
mA
Test Conditions
I
C
=5mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=2mA, I
C
=0
V
CB
=700V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=1.5A
V
I
C
=1A, I
B
=250mA
V
I
C
=1A, I
B
=250mA
MHz V
CE
=10V, I
C
=100mA, f =1MHz
µs
I
C
=1A,I
B1
= -I
B2
=0.2A,V
CC
=100V
µs
changes of specification will not be informed individually.
Any
I
C
=250mA (UI9600)
23-Jun-2011 Rev. A
Page 1 of 2

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