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LMC660EN

Description
Operational Amplifier, 4 Func, 6500uV Offset-Max, CMOS, PDIP14, PLASTIC, DIP-14
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size1MB,19 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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LMC660EN Overview

Operational Amplifier, 4 Func, 6500uV Offset-Max, CMOS, PDIP14, PLASTIC, DIP-14

LMC660EN Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRochester Electronics
Parts packaging codeDIP
package instructionDIP,
Contacts14
Reach Compliance Codeunknown
ECCN codeEAR99
Amplifier typeOPERATIONAL AMPLIFIER
Maximum average bias current (IIB)0.00006 µA
Nominal Common Mode Rejection Ratio83 dB
Maximum input offset voltage6500 µV
JESD-30 codeR-PDIP-T14
JESD-609 codee0
length19.18 mm
Nominal Negative Supply Voltage (Vsup)
Number of functions4
Number of terminals14
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height5.08 mm
Nominal slew rate1.1 V/us
Supply voltage upper limit16 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Nominal Uniform Gain Bandwidth1400 kHz
width7.62 mm

LMC660EN Preview

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LMC660 CMOS Quad Operational Amplifier
April 1998
LMC660
CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It operates from +5V to +15V
and features rail-to-rail output swing in addition to an input
common-mode range that includes ground. Performance
limitations that have plagued CMOS amplifiers in the past
are not a problem with this design. Input V
OS
, drift, and
broadband noise as well as voltage gain into realistic loads
(2 kΩ and 600Ω) are all equal to or better than widely ac-
cepted bipolar equivalents.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC662 datasheet for a dual CMOS operational
amplifier with these same features.
n
n
n
n
n
n
n
Ultra low input bias current: 2 fA
Input common-mode range includes V
Operating range from +5V to +15V supply
I
SS
= 375 µA/amplifier; independent of V
+
Low distortion: 0.01% at 10 kHz
Slew rate: 1.1 V/µs
Available in extended temperature range (−40˚C to
+125˚C); ideal for automotive applications
n
Available to Standard Military Drawing specification
Applications
n
n
n
n
n
n
n
n
High-impedance buffer or preamplifier
Precision current-to-voltage converter
Long-term integrator
Sample-and-Hold circuit
Peak detector
Medical instrumentation
Industrial controls
Automotive sensors
Features
n
n
n
n
n
Rail-to-rail output swing
Specified for 2 kΩ and 600Ω loads
High voltage gain: 126 dB
Low input offset voltage: 3 mV
Low offset voltage drift: 1.3 µV/˚C
Connection Diagram
14-Pin DIP/SO
DS008767-1
© 1999 National Semiconductor Corporation
DS008767
www.national.com
Ordering Information
Package
Military
−55˚C to +125˚C
14-Pin
Ceramic DIP
14-Pin
Small Outline
14-Pin
Molded DIP
14-Pin
Side Brazed
Ceramic DIP
LMC660AMD
D14E
Rail
LMC660EN
LMC660AIN
LMC660CN
N14A
LMC660EM
LMC660AIM
LMC660CM
M14A
Rail
Tape and Reel
Rail
LMC660AMJ/883
Temperature Range
Extended
−40˚C +125˚C
Industrial
−40˚C to +85˚C
Commercial
0˚C to +70˚C
J14A
Rail
NSC
Drawing
Transport
Media
www.national.com
2
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Voltage at Input/Output Pins
Current at Output Pin
Current at Input Pin
Current at Power Supply Pin
Power Dissipation
Junction Temperature
ESD tolerance (Note 8)
Operating Ratings
Temperature Range
LMC660AMJ/883,
LMC660AMD
LMC660AI
LMC660C
LMC660E
Supply Voltage Range
Power Dissipation
Thermal Resistance (θ
JA
) (Note 11)
14-Pin Ceramic DIP
14-Pin Molded DIP
14-Pin SO
14-Pin Side Brazed
Ceramic DIP
−55˚C
T
J
+125˚C
−40˚C
T
J
+85˚C
0˚C
T
J
+70˚C
−40˚C
T
J
+125˚C
4.75V to 15.5V
(Note 10)
90˚C/W
85˚C/W
115˚C/W
90˚C/W
±
Supply Voltage
16V
(Note 12)
(Note 1)
260˚C
−65˚C to +150˚C
(V
+
) + 0.3V, (V
) − 0.3V
±
18 mA
±
5 mA
35 mA
(Note 2)
150˚C
1000V
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
(Note 4)
LMC660AMD
LMC660AMJ/883
Limit
(Notes 4, 9)
Input Offset Voltage
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
V = 5V & 15V
For CMRR
50 dB
V
+
− 1.9
Large Signal
Voltage Gain
R
L
= 2 kΩ (Note 5)
Sourcing
Sinking
R
L
= 600Ω (Note 5)
Sourcing
Sinking
250
500
1000
2000
+
+
LMC660AI LMC660C LMC660E
Limit
(Note 4)
3
3.3
Limit
(Note 4)
6
6.3
Limit
(Note 4)
6
6.5
Units
1
1.3
0.002
0.001
3
3.5
mV
max
µV/˚C
20
100
20
100
2
70
68
70
68
84
83
−0.1
0
V
+
− 2.3
V − 2.5
440
400
180
120
220
200
100
60
+
+
pA
4
2
1
63
62
63
62
74
73
−0.1
0
V
+
− 2.3
V − 2.4
300
200
90
80
150
100
50
40
+
60
60
63
60
63
60
74
70
−0.1
0
V
+
− 2.3
V − 2.6
200
100
90
40
100
75
50
20
max
pA
max
TeraΩ
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
V/mV
min
V/mV
min
>
1
0V
V
CM
12.0V
V
+
= 15V
5V
V
15V
V
O
= 2.5V
+
83
83
94
−0.4
70
68
70
68
84
82
−0.1
0
V
+
− 2.3
V − 2.6
400
300
180
70
200
150
100
35
0V
V
−10V
3
www.national.com
DC Electrical Characteristics
Parameter
Conditions
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Typ
(Note 4)
LMC660AMD
LMC660AMJ/883
Limit
(Notes 4, 9)
Output Swing
V = 5V
R
L
= 2 kΩ to V
+
/2
+
LMC660AI LMC660C LMC660E
Limit
(Note 4)
4.82
4.79
0.15
0.17
4.41
4.31
0.50
0.56
14.50
14.44
0.35
0.40
13.35
13.15
1.16
1.32
16
14
16
14
28
25
28
24
2.2
2.6
Limit
(Note 4)
4.78
4.76
0.19
0.21
4.27
4.21
0.63
0.69
14.37
14.32
0.44
0.48
12.92
12.76
1.45
1.58
13
11
13
11
23
21
23
20
2.7
2.9
Limit
(Note 4)
4.78
4.70
0.19
0.25
4.27
4.10
0.63
0.75
14.37
14.25
0.44
0.55
12.92
12.60
1.45
1.75
13
9
13
9
23
15
23
15
2.7
3.0
Units
4.87
0.10
4.82
4.77
0.15
0.19
4.41
4.24
0.50
0.63
14.50
14.40
0.35
0.43
13.35
13.02
1.16
1.42
16
12
16
12
19
19
19
19
2.2
2.9
V
min
V
max
V
min
V
max
V
min
V
max
V
min
V
max
mA
min
mA
min
mA
min
mA
min
mA
max
V = 5V
R
L
= 600Ω to V
+
/2
+
4.61
0.30
V = 15V
R
L
= 2 kΩ to V
+
/2
+
14.63
0.26
V
+
= 15V
R
L
= 600Ω to V
+
/2
13.90
0.79
Output Current
V
+
= 5V
Sourcing, V
O
= 0V
Sinking, V
O
= 5V
22
21
40
39
1.5
Output Current
V
+
= 15V
Sourcing, V
O
= 0V
Sinking, V
O
= 13V
(Note 12)
Supply Current
All Four Amplifiers
V
O
= 1.5V
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
(Note 4)
LMC660AMD
LMC660AMJ/883
Limit
(Notes 4, 9)
Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input Referred Voltage Noise
Input Referred Current Noise
(Note 7)
F = 1 kHz
F = 1 kHz
(Note 6)
1.1
1.4
50
17
130
22
0.0002
0.8
0.5
0.5
Limit
(Note 4)
0.8
0.6
Limit
(Note 4)
0.8
0.7
Limit
(Note 4)
0.8
0.4
V/µs
min
MHz
Deg
dB
dB
LMC660AI
LMC660C
LMC660E
Units
www.national.com
4

LMC660EN Related Products

LMC660EN LMC660EM
Description Operational Amplifier, 4 Func, 6500uV Offset-Max, CMOS, PDIP14, PLASTIC, DIP-14 Operational Amplifier, 4 Func, 6500uV Offset-Max, CMOS, PDSO14, SO-14
Is it lead-free? Contains lead Lead free
Is it Rohs certified? incompatible incompatible
Maker Rochester Electronics Rochester Electronics
Parts packaging code DIP SOIC
package instruction DIP, SOP,
Contacts 14 14
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Amplifier type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Maximum average bias current (IIB) 0.00006 µA 0.00006 µA
Nominal Common Mode Rejection Ratio 83 dB 83 dB
Maximum input offset voltage 6500 µV 6500 µV
JESD-30 code R-PDIP-T14 R-PDSO-G14
JESD-609 code e0 e0
length 19.18 mm 8.65 mm
Number of functions 4 4
Number of terminals 14 14
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP SOP
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum seat height 5.08 mm 1.75 mm
Nominal slew rate 1.1 V/us 1.1 V/us
Supply voltage upper limit 16 V 16 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount NO YES
technology CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE
Terminal surface TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE GULL WING
Terminal pitch 2.54 mm 1.27 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Nominal Uniform Gain Bandwidth 1400 kHz 1400 kHz
width 7.62 mm 3.9 mm

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