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LPC660IMX/NOPB

Description
QUAD OP-AMP, 6300 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO14, ROHS COMPLIANT, SOIC-14
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size2MB,18 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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LPC660IMX/NOPB Overview

QUAD OP-AMP, 6300 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO14, ROHS COMPLIANT, SOIC-14

LPC660IMX/NOPB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeSOIC
package instructionSOP,
Contacts14
Reach Compliance Codeunknown
Amplifier typeOPERATIONAL AMPLIFIER
Maximum average bias current (IIB)0.000004 µA
Nominal Common Mode Rejection Ratio83 dB
Maximum input offset voltage6300 µV
JESD-30 codeR-PDSO-G14
JESD-609 codee3
length8.65 mm
Humidity sensitivity level1
Negative supply voltage upper limit
Nominal Negative Supply Voltage (Vsup)
Number of functions4
Number of terminals14
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum seat height1.75 mm
Nominal slew rate0.11 V/us
Supply voltage upper limit16 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
Nominal Uniform Gain Bandwidth350 kHz
width3.9 mm

LPC660IMX/NOPB Preview

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LPC660 Low Power CMOS Quad Operational Amplifier
November 2004
LPC660
Low Power CMOS Quad Operational Amplifier
General Description
The LPC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltages from +5V to +15V and features rail-to-rail
output swing in addition to an input common-mode range
that includes ground. Performance limitations that have
plagued CMOS amplifiers in the past are not a problem with
this design. Input V
OS
, drift, and broadband noise as well as
voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better
than widely accepted bipolar equivalents, while the power
supply requirement is typically less than 1 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC662 datasheet for a Dual CMOS operational
amplifier and LPC661 datasheet for a single CMOS opera-
tional amplifier with these same features.
n
n
n
n
n
Long-term integrator
High-impedance preamplifier
Active filter
Sample-and-Hold circuit
Peak detector
Features
n
n
n
n
n
n
n
n
n
n
n
n
Rail-to-rail output swing
Micropower operation:
Specified for 100 kΩ and 5 kΩ loads
High voltage gain:
Low input offset voltage:
Low offset voltage drift:
Ultra low input bias current:
Input common-mode includes V
Operation range from +5V to +15V
Low distortion:
Slew rate:
Full military temp. range available
(1 mW)
120 dB
3 mV
1.3 µV/˚C
2 fA
Applications
n
High-impedance buffer
n
Precision current-to-voltage converter
0.01% at 1 kHz
0.11 V/µs
Application Circuit
Sine-Wave Oscillator
01054710
Oscillator frequency is determined by R1, R2, C1, and C2:
f
OSC
= 1/2πRC
where R = R1 = R2 and C = C1 = C2.
© 2004 National Semiconductor Corporation
DS010547
www.national.com
LPC660
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage (V
+
− V
)
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Junction Temperature (Note 2)
ESD Rating
(C = 100 pF, R = 1.5 kΩ)
Power Dissipation
Current at Input Pin
Current at Output Pin
Voltage at Input/Output Pin
1000V
(Note 2)
260˚C
−65˚C to +150˚C
150˚C
Current at Power Supply Pin
35 mA
Operating Ratings
(Note 3)
Temperature Range
LPC660AM
LPC660AI
LPC660I
Supply Range
Power Dissipation
Thermal Resistance (θ
JA
), (Note 10)
14-Pin Ceramic DIP
14-Pin Molded DIP
14-Pin SO
14-Pin Side Brazed Ceramic DIP
90˚C/W
85˚C/W
115˚C/W
90˚C/W
−55˚C
T
J
+125˚C
−40˚C
T
J
+85˚C
−40˚C
T
J
+85˚C
4.75V to 15.5V
(Note 9)
±
Supply Voltage
16V
(Note 11)
(Note 1)
±
5 mA
±
18 mA
(V
+
) + 0.3V, (V
) −
0.3V
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V, and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
LPC660AM
LPC660AMJ/883
Limit
(Notes 4, 8)
Input Offset Voltage
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common Mode
Voltage Range
V = 5V & 15V
For CMRR
>
50 dB
V − 1.9
Large Signal
R
L
= 100 kΩ (Note 5)
1000
+
+
+
LPC660AI
Limit
(Note 4)
3
3.3
LPC660I
Limit
(Note 4)
6
6.3
Units
1
1.3
0.002
0.001
3
3.5
mV
max
µV/˚C
20
100
20
100
2
70
68
70
68
84
83
−0.1
0
V − 2.3
V
+
− 2.5
400
+
+
pA
4
4
2
63
61
63
61
74
73
−0.1
0
V − 2.3
V
+
− 2.5
300
max
pA
max
Tera
dB
min
dB
min
dB
min
V
max
V
min
V/mV
>
1
0V
V
CM
12.0V
V = 15V
5V
V
+
15V
0V
V
−10V
+
83
83
94
−0.4
70
68
70
68
84
82
−0.1
0
V − 2.3
V
+
− 2.6
400
www.national.com
2
LPC660
DC Electrical Characteristics
Parameter
Conditions
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V, and R
L
>
1M unless otherwise specified.
Typ
LPC660AM
LPC660AMJ/883
Limit
(Notes 4, 8)
Limit
(Note 4)
300
180
120
200
160
100
60
4.970
4.950
0.030
0.050
4.850
4.750
0.150
0.250
14.920
14.880
0.030
0.050
14.680
14.600
0.220
0.300
16
14
16
14
28
25
28
24
200
230
Limit
(Note 4)
200
90
70
100
80
50
40
4.940
4.910
0.060
0.090
4.750
4.650
0.250
0.350
14.880
14.820
0.060
0.090
14.580
14.480
0.320
0.400
13
11
13
11
23
20
23
19
240
270
min
V/mV
min
V/mV
min
V/mV
min
V
min
V
max
V
min
V
max
V
min
V
max
V
min
V
max
mA
min
mA
min
mA
min
mA
min
µA
max
LPC660AI
LPC660I
Units
Voltage Gain
Sourcing
Sinking
R
L
= 5 kΩ (Note 5)
Sourcing
Sinking
250
4.987
0.004
V = 5V
R
L
= 5 kΩ to V /2
0.040
V
+
= 15V
R
L
= 100 kΩ to V /2
0.007
V = 15V
R
L
= 5 kΩ to V
+
/2
0.110
+
+
+
+
250
500
1000
180
70
200
150
100
35
4.970
4.950
0.030
0.050
4.940
4.850
4.750
0.150
0.250
14.970
14.920
14.880
0.030
0.050
14.840
14.680
14.600
0.220
0.300
16
12
16
12
19
19
19
19
160
200
250
Output Swing
V = 5V
R
L
= 100 kΩ to V
+
/2
+
Output Current
V
+
= 5V
Sourcing, V
O
= 0V
Sinking, V
O
= 5V
22
21
40
39
Output Current
V = 15V
+
Sourcing, V
O
= 0V
Sinking, V
O
= 13V
(Note 11)
Supply Current
All Four Amplifiers
V
O
= 1.5V
3
www.national.com
LPC660
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5, and R
L
>
1M unless otherwise specified.
Parameter
Conditions
Typ
LPC660AM
LPC660AMJ/883
Limit
(Notes 4, 8)
Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input Referred Voltage Noise
Input Referred Current Noise
Total Harmonic Distortion
(Note 7)
F = 1 kHz
F = 1 kHz
F = 1 kHz, A
V
= −10
R
L
= 100 kΩ, V
O
= 8 V
PP
Note 1:
Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of
±
30 mA over long term may adversely affect reliability.
Note 2:
The maximum power dissipation is a function of T
J(max)
,
θ
JA
and T
A
. The maximum allowable power dissipation at any ambient temperature is P
D
=
(T
J(max)
–T
A
JA
.
Note 3:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4:
Limits are guaranteed by testing or correlation.
Note 5:
V
+
= 15V, V
CM
= 7.5V and R
L
connected to 7.5V. For Sourcing tests, 7.5V
V
O
11.5V. For Sinking tests, 2.5V
V
O
7.5V.
Note 6:
V
+
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7:
Input referred. V
+
= 15V and R
L
= 100 kΩ connected to V
+
/2. Each amp excited in turn with 1 kHz to produce V
O
= 13 V
PP
.
Note 8:
A military RETS electrical test specification is available on request. At the time of printing, the LPC660AMJ/883 RETS specification complied fully with the
boldface
limits in this column. The LPC660AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 9:
For operating at elevated temperatures, the device must be derated based on the thermal resistance
θ
JA
with P
D
= (T
J
–T
A
)/θ
JA
.
Note 10:
All numbers apply for packages soldered directly into a PC board.
Note 11:
Do not connect output to V
+
when V
+
is greater than 13V or reliability may be adversely affected.
LPC660AI
Limit
(Note 4)
0.07
0.05
LPC660I
Limit
(Note 4)
0.05
0.03
Units
(Note 6)
0.11
0.35
50
17
130
42
0.0002
0.01
0.07
0.04
V/µs
min
MHz
Deg
dB
dB
%
www.national.com
4
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