APT38F80B2
APT38F80L
800V, 41A, 0.24Ω Max, trr
≤300ns
N-Channel FREDFET
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
rr
, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C
rss
/C
iss
result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
T-Max
®
TO-264
APT38F80B2
APT38F80L
Single die FREDFET
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Parameter
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
1
Ratings
41
26
150
±30
1710
20
Unit
A
V
mJ
A
Thermal and Mechanical Characteristics
Symbol
P
D
R
θ
JC
R
θ
CS
T
J
,T
STG
T
L
W
T
Characteristic
Total Power Dissipation @ T
C
= 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
0.22
Package Weight
6.2
10
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
1.1
MicrosemiWebsite-http://www.microsemi.com
N·m
-55
0.11
150
°C
300
oz
g
in·lbf
04-2009
050-8107
Rev C
Min
Typ
Max
1040
0.12
Unit
W
°C/W
Static Characteristics
Symbol
V
BR(DSS)
ΔV
BR(DSS)
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
T
J
= 25°C unless otherwise specified
Test Conditions
V
GS
= 0V
,
I
D
= 250µA
Reference to 25°C, I
D
= 250µA
V
GS
= 10V
,
I
D
= 20A
V
GS
= V
DS
,
I
D
= 2.5mA
V
DS
= 800V
V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
APT38F80B2_L
Typ
0.87
Max
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance
3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Min
800
2.5
0.19
4
-10
0.24
5
250
1000
±100
V
GS
= ±30V
Dynamic Characteristics
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
C
o(er)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
4
T
J
= 25°C unless otherwise specified
Test Conditions
V
DS
= 50V
,
I
D
= 20A
V
GS
= 0V
,
V
DS
= 25V
f = 1MHz
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Min
Typ
38
8070
140
805
380
Max
Unit
S
pF
V
GS
= 0V
,
V
DS
= 0V to 533V
5
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
V
GS
= 0 to 10V
,
I
D
= 20A,
V
DS
= 400V
Resistive Switching
V
DD
= 533V
,
I
D
= 20A
R
G
= 2.2Ω
6
190
260
44
135
46
65
200
60
nC
,
V
GG
= 15V
ns
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
dv/dt
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD
= 20A
,
T
J
= 25°C, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
I
SD
= 20A
3
V
DD
= 100V
di
SD
/
dt = 100A/µs
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
SD
≤
20A, di/dt
≤1000A/µs,
V
DD
= 533V,
T
J
= 125°C
Min
Typ
Max
41
Unit
A
150
1.2
300
600
V
ns
µC
A
20
V/ns
250
485
2
6.7
13
22
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J
= 25°C, L = 8.55mH, R
G
= 25Ω, I
AS
= 20A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
04-2009
Rev C
4 C
o(cr)
is defined as a fixed capacitance with the same stored charge as C
OSS
with V
DS
= 67% of V
(BR)DSS
.
5 C
o(er)
is defined as a fixed capacitance with the same stored energy as C
OSS
with V
DS
= 67% of V
(BR)DSS
. To calculate C
o(er)
for any value of
V
DS
less than V
(BR)DSS,
use this equation: C
o(er)
= -2.17E-7/V
DS
^2 + 2.63E-8/V
DS
+ 3.74E-11.
6 R
G
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8107
APT38F80B2_L
100
V
GS
50
= 10V
T = 125°C
J
90
80
I
D
, DRAIN CURRENT (A)
70
T
J
= 25°C
T
J
= -55°C
V
V
GS
= 10, & 15V
40
I
D
, DRIAN CURRENT (A)
GS
= 6, & 6.5V
5.5V
60
50
40
30
20
10
0
T
J
= 125°C
T
J
= 150°C
30
20
5V
10
4.5V
4V
0
5
10
15
20
25
30
V
DS(ON)
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
0
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
3.0
NORMALIZED TO
V
GS
= 10V @ 20A
150
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
2.5
I
D
, DRAIN CURRENT (A)
125
2.0
100
T
J
= -55°C
1.5
75
T
J
= 25°C
1.0
50
T
J
= 125°C
0.5
0
-55 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3, R
DS(ON)
vs Junction Temperature
60
T
J
= -55°C
T
J
= 25°C
25
0
0
1
2
3
4
5
6
7
8
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
C
iss
20,000
10,000
50
g
fs
, TRANSCONDUCTANCE
40
T
J
= 125°C
C, CAPACITANCE (pF)
1,000
30
C
oss
100
C
rss
20
10
0
10
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
35
200
400
600
800
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
0
16
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
14
12
I
D
= 20A
150
I
SD,
REVERSE DRAIN CURRENT (A)
125
V
DS
=
160V
10
V
DS
=
400V
100
T
J
= 25°C
T
J
= 150°C
8
6
V
DS
=
640V
75
50
4
2
50 100 150 200 250 300 350 400
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0
25
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
Rev C
050-8107
04-2009
APT38F80B2_L
200
100
I
DM
200
100
I
DM
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
Rds(on)
10
10
13µs
100µs
Rds(on)
1ms
10ms
100ms
T
J
=
125°C
T
C
=
75°C
DC line
13µs
100µs
1ms
10ms
100ms
DC line
1
1
T
J
=
150°C
T
C
=
25°C
Scaling for Different Case & Junction
Temperatures:
I
D
=
I
D(T = 25
°
C)
*(
T
J
-
T
C
)/125
0.1
1
10
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
0.1
C
10
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
1
0.14
0.12
D = 0.9
0.10
0.7
0.08
0.06
0.04
0.02
0
0.5
Note:
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
PDM
t1
t2
0.3
SINGLE PULSE
0.1
0.05
10
-5
10
-4
t
1
= Pulse Duration
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
T-MAX
®
(B2) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
04-2009
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Rev C
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
050-8107
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
