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APT80M60J_09

Description
58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size211KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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APT80M60J_09 Overview

58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET

APT58M50J
500V, 58A, 0.065Ω Max
N-Channel MOSFET
Power MOS 8
is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
rss
"Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in
yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
S
G
D
S
SO
T
2
-2
7
"UL Recognized"
IS OTO P
®
file # E145592
APT58M50J
Single die MOSFET
G
D
S
FEATURES
• Fast switching with low EMI/RFI
• Low R
DS(on)
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Parameter
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
1
Ratings
58
37
270
±30
1845
42
Unit
A
V
mJ
A
Thermal and Mechanical Characteristics
Symbol
P
D
R
θ
JC
R
θ
CS
T
J
,T
STG
V
Isolation
W
T
Characteristic
Total Power Dissipation @ T
C
= 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
-55
2500
1.03
29.2
10
1.1
0.15
150
Min
Typ
Max
540
0.23
Unit
W
°C/W
°C
V
Rev D 8-2011
050-8096
oz
g
in·lbf
N·m
Torque
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com

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APT80M60J_09 APT58M50J_09
Description 58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET 58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
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