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APTGF25H120T3G_09

Description
40 A, 1200 V, N-CHANNEL IGBT
Categorysemiconductor    Discrete semiconductor   
File Size524KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APTGF25H120T3G_09 Overview

40 A, 1200 V, N-CHANNEL IGBT

APTGF25H120T3G_09 Parametric

Parameter NameAttribute value
Number of terminals25
Rated off time386 ns
Maximum collector current40 A
Maximum Collector-Emitter Voltage1200 V
Processing package descriptionROHS COMPLIANT, SP3, Module-25
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formUNSPECIFIED
terminal coatingtin silver copper
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureCOMPLEX
Shell connectionisolation
Number of components4
transistor applicationsMotor control
Transistor component materialssilicon
Channel typeN channel
Transistor typeINSULATED GATE BIPOLAR
Rated on time110 ns
APTGF25H120T3G
Full - Bridge
NPT IGBT Power Module
V
CES
= 1200V
I
C
= 25A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
16
15
28 27 26 25
29
30
23 22
20 19 18
31
32
2
3
4
7
8
10 11 12
14
13
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive T
C
of V
CEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
APTGF25H120T3G – Rev 3 October, 2012
Max ratings
1200
40
25
100
±20
208
50A@1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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