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GBL210

Description
2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size261KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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GBL210 Overview

2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBL210 Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompli
GBL201 ~ GBL210
Elektronische Bauelemente
VOLTAGE 100 V ~ 1000 V
2.0 Amp Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
High current capacity with small package
Glass passivated chip junctions
Superior thermal conductivity
High IFSM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
at 25°C ambient temperature unless otherwise specified.
GBL
201
GBL
202
GBL
204
GBL
206
GBL
208
GBL
210
PARAMETERS
Maximum Repetitive Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum DC Reverse Current at Rated DC @T
A
=25℃
Blocking Voltage
@T =125℃
A
SYMBOL
UNIT
V
RRM
V
RMS
V
DC
I
R
I
O
I
FSM
l2t
V
dia
V
F
R
θJA
R
θJC
T
J
, T
STG
100
70
100
200
140
200
400
280
400
5
500
2
80
40
2.5
600
420
600
800
560
800
1000
700
1000
V
A
A
A
A2sec
KV
V
°C / W
°C
Average rectified forward current 60Hz Sine Wave
Resistance load
with heat sink
@T
C
=100℃
Peak Forward Surge Current 8.3 ms Single Half Sine-Wave
Superimposed on Rated Load
Rating of fusing (t < 8.3ms)
Dielectric strength terminals to case,
AC 1 minute Current 1mA
Maximum instantaneous forward voltage at 2.0A
Maximum thermal on P.C.B without heat-sink
Resistance per leg on AI plate heat-sink
Operating Junction and Storage Temperature Range
1.1
32
13
150, -55 ~ 150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Jul-2010 Rev. A
Page 1 of 2

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