EEWORLDEEWORLDEEWORLD

Part Number

Search

GBL404

Description
3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size279KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

GBL404 Overview

3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

GBL404 Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompli
ECCN codeEAR99
GBL401 ~ GBL410
Elektronische Bauelemente
VOLTAGE 100 V ~ 1000 V
4.0 Amp Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
High current capacity with small package
Glass passivated chip junctions
Superior thermal conductivity
High IFSM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
at 25°C ambient temperature unless otherwise specified.
GBL
401
GBL
402
GBL
404
GBL
406
GBL
408
GBL
410
PARAMETERS
Maximum Repetitive Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum DC Reverse Current at Rated DC @T
A
=25℃
Blocking Voltage
@T =125℃
A
SYMBOL
UNIT
V
RRM
V
RMS
V
DC
I
R
I
O
I
FSM
l2t
V
dia
V
F
R
θJA
R
θJC
T
J
, T
STG
100
70
100
200
140
200
400
280
400
5
500
4
3
150
93
2.5
600
420
600
800
560
800
1000
700
1000
V
A
A
A
A2sec
KV
V
°C / W
°C
Average rectified forward current 60Hz Sine
Wave Resistance load
@T
C
=50℃
@T
A
=40℃
Peak Forward Surge Current 8.3 ms Single Half Sine-Wave
Superimposed on Rated Load
Rating of fusing (t < 8.3ms)
Dielectric strength terminals to case,
AC 1 minute Current 1mA
Maximum instantaneous forward voltage at 2.0A
Maximum thermal on P.C.B without heat-sink
Resistance per leg on AI plate heat-sink
Operating Junction and Storage Temperature Range
1.1
32
8
150, -55 ~ 150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Jul-2010 Rev. A
Page 1 of 2

GBL404 Related Products

GBL404 GBL402 GBL406 GBL410 GBL408 GBL401
Description 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code compli compli compli compli compli compli
Maker SECOS SECOS SECOS - - SECOS
Several issues on the development of handheld POS machines
I used to be engaged in .NET software development, and now I am gradually learning embedded development. Now the company needs to develop a handheld POS machine. It is developed based on MC2002 API. T...
guoyaru123 Embedded System
Let me talk a little about Chinese FPGA design. Everyone is welcome to criticize!
In my opinion, Chinese FPGA design lacks a concept, has no complete guiding ideology, has a long design cycle, is difficult to quickly meet new market demands, and rarely develops its own industry sta...
FPGA小牛 FPGA/CPLD
Enabling 5G Mobile Communications with GaN Technology: Laying a Solid Foundation for Success
Qorvo is closely following the emerging 5G standards. Excitingly, 5G may include millimeter wave capabilities for high data bandwidth connections. As PC board space becomes increasingly compact and fr...
EEWORLD社区 RF/Wirelessly
[My relationship with TI] TI chips used over the years
[i=s]This post was last edited by stormbreaker on 2015-1-25 15:24[/i] I remember the first time I used TI chips was when I participated in a smart car competition in 2011. I used a TI TPS series low-v...
stormbreaker TI Technology Forum
Functional testing of wireless charging solutions for passive devices
After proofing and material selection, the PCBA of passive device wireless charging has been completed. Let's test the effect For design principles, please refer to the previous post: https://bbs.eewo...
se7ens Switching Power Supply Study Group
Problems with BT151
Can anyone tell me what the turn-on voltage and current are, what the turn-off voltage and current are, and whether it is a unidirectional thyristor or a bidirectional thyristor?...
kangkang Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 399  70  1407  1481  707  9  2  29  30  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号