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HER101G

Description
1 A, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size146KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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HER101G Overview

1 A, SILICON, SIGNAL DIODE, DO-41

HER101G ~ HER107G
Elektronische Bauelemente
VOLTAGE 50 ~ 1000 V
1 A, Glass Passivated High Efficiency Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
High speed switching
DO-41
C
A
B
PACKAGING INFORMATION
Glass Passivated
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.34 grams (approximately)
D
A
REF.
A
B
C
D
Millimeter
Min.
Max.
25.4 (TYP)
4.10
5.21
2.00
2.72
0.70
0.90
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
AMB
= 25°C ambient temperature unless otherwise specified.
Single phase half-wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PART NUMBERS
SYMBOL
HER
HER
HER
HER
HER
PARAMETERS
101
G
102
G
103
G
104
G
105
G
HER
106
G
HER
107
G
UNITS
TESTING
CONDITIONS
Recurrent Reverse Voltage (Max.)
RMS Voltage (Max.)
DC Blocking Voltage (Max.)
Instantaneous Forward Voltage
(Max.)
Average Forward
Rectified Current (Max.)
V
RRM
V
RMS
V
DC
V
F
I
O
50
35
50
100
70
100
1.00
200
140
200
400
280
400
1.30
1.0
600
420
600
800
560
800
1.70
1000
700
1000
V
V
V
V
A
I
F
= 1A
0.375” (9.5mm)
lead length
@ T
A
= 55°C
8.3 ms single half
sine-wave
superimposed on
rated load
(JEDEC method)
Peak Forward Surge Current
I
FSM
30
5.0
150
50
20
-65 ~ 150
70
15
A
DC Reverse Current (Max.)
Reverse Recovery Time (Max.)
Junction Capacitance (Typ.)
Storage Temperature Range
I
R
T
RR
C
J
T
STG
μA
nS
pF
°C
V
R
= V
DC
, T
A
=25°C
V
R
=V
DC
, T
A
=100°C
I
F
=0.5A, I
R
=1.0A,
I
RR
=0.25A
f=1MHz and
applied 4V DC
reverse voltage
01-April-2009 Rev. C
Page 1 of 2

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Description 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 300 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41
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