HER501G datasheet, PDF - EEWORLD Datasheet

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HER501G: DescriptionGlass Passivated High Efficiency Rectifiers; CategoryDiscrete semiconductor diode; File Size261KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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HER501G Overview

Glass Passivated High Efficiency Rectifiers

HER501G Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	O-PALF-W2
Reach Compliance Code	compli
Other features	HIGH RELIABILITY
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JEDEC-95 code	DO-27
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	50 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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HER501G ~ HER507G

Elektronische Bauelemente

VOLTAGE 50 ~ 1000 V, 5.0AMP

Glass Passivated High Efficiency Rectifiers

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DO-27

FEATURES

Low forward voltage drop

High current capability

High reliability

High surge current capability

High speed switching

C

A

B

D

A

MECHANICAL DATA

Case: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Axial leads, solderable per MIL-STD-202, Methode 208 guranteed

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 1.10 grams

REF.

A

B

C

D

Millimeter

Min.

Max.

25.4 (TYP)

7.20

9.50

4.80

5.60

1.10

1.30

MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

PART NUMBERS

PARAMETER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

9.5mm Lead length at T

A

=50°

C

Peak Forward Surge Current, 8.3ms single half

sine-wave superimposed on rated load (JEDEC

methode)

Maximum Instantaneous Forward Voltage @ 5.0A

Maximum DC Reverse Current at

Rated DC Blocking Voltage

Maximum Reverse Recovery Time

1

Typical Junction Capacitance

2

SYMBOL

V

RRM

V

RMS

V

DC

I

F

HER

501G

50

35

50

HER

502G

100

70

100

HER

503G

200

140

200

HER

504G

400

280

400

5.0

HER

505G

600

420

600

HER

506G

800

560

800

HER

507G

1000

700

1000

UNIT

V

A

I

FSM

V

F

I

R

T

RR

C

J

50

1.0

100

1.3

10

200

70

100

-55~150

1.85

A

V

µA

nS

pF

°

C

T

A

=25°

C

T

A

=100°

C

Operating & Storage Temperature

T

J

,T

STG

Note: 1. Reverse Recovery Time test condition: I

F

=0.5A, I

R

=1.0A, I

RR

=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Single Phase half wave, 60Hz, resistive or inductive load.

4. For capacitive load, derate current by 20%.

09-Dec-2009 Rev. A

Page 1 of 2

HER501G Related Products

	HER501G	HER506G	HER503G	HER505G	HER507G	HER502G	HER504G
Description	Glass Passivated High Efficiency Rectifiers	Glass Passivated High Efficiency Rectifiers	Glass Passivated High Efficiency Rectifiers	Glass Passivated High Efficiency Rectifiers	Glass Passivated High Efficiency Rectifiers	Glass Passivated High Efficiency Rectifiers	Glass Passivated High Efficiency Rectifiers
Maker	SECOS	SECOS	SECOS	SECOS	SECOS	SECOS	SECOS
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	compli	compli	compli	compliant	compli	compli	compliant
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1.85 V	1 V	1.85 V	1.85 V	1 V	1.3 V
JEDEC-95 code	DO-27	DO-27	DO-27	DO-27	DO-27	DO-27	DO-27
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A	100 A	100 A	100 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	5 A	5 A	5 A	5 A	5 A	5 A	5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	50 V	800 V	200 V	600 V	1000 V	100 V	400 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
Maximum reverse recovery time	0.05 µs	0.07 µs	0.05 µs	0.07 µs	0.07 µs	0.05 µs	0.05 µs
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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