AM29LV128MH123RFI datasheet, PDF

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AM29LV128MH123RFI: DescriptionIC,EEPROM,NOR FLASH,8MX16/16MX8,CMOS,TSSOP,56PIN,PLASTIC; Categorystorage storage; File Size1MB，66 Pages; ManufacturerCypress Semiconductor

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AM29LV128MH123RFI Overview

IC,EEPROM,NOR FLASH,8MX16/16MX8,CMOS,TSSOP,56PIN,PLASTIC

AM29LV128MH123RFI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Reach Compliance Code	compliant
Maximum access time	120 ns
Spare memory width	8
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G56
memory density	134217728 bit
Memory IC Type	FLASH
Number of departments/size	256
Number of terminals	56
word count	8388608 words
character code	8000000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP56,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size	4/8 words
Parallel/Serial	PARALLEL
power supply	1.8/3.3,3.3 V
Certification status	Not Qualified
ready/busy	YES
reverse pinout	YES
Department size	64K
Maximum standby current	0.000005 A
Maximum slew rate	0.08 mA
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
type	NOR TYPE

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Am29LV128MH/L

Data Sheet

RETIRED

PRODUCT

This product has been retired and is not recommended for designs. For new and current designs,

S29GL256N supersedes Am29LV128MH/L and is the factory-recommended migration path. Please

refer to the S29GL256N datasheet for specifications and ordering information. Availability of this

document is retained for reference and historical purposes only.

The following document contains information on Spansion memory products.

Continuity of Specifications

There is no change to this data sheet as a result of offering the device as a Spansion product. Any

changes that have been made are the result of normal data sheet improvement and are noted in the

document revision summary.

For More Information

Please contact your local sales office for additional information about Spansion memory solutions.

Publication Number

25270

Revision

Amendment

Issue Date

January 31, 2007

D A T A

S H E E T

TABLE OF CONTENTS

Continuity of Specifications ............................................................. i

For More Information ....................................................................... i

Sector Erase Command Sequence .............................................. 34

Erase Suspend/Erase Resume Commands ................................ 35

Figure 7. Erase Operation.............................................................. 36

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 7

Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10

Device Bus Operations . . . . . . . . . . . . . . . . . . . . 11

Table 1. Device Bus Operations ...........................................................11

Command Definitions ............................................................. 37

Table 10. Command Definitions (x16 Mode, BYTE# = V

) ................. 37

Table 11. Command Definitions (x8 Mode, BYTE# = V

) ................... 38

Write Operation Status . . . . . . . . . . . . . . . . . . . . . 39

DQ7: Data# Polling ...................................................................... 39

Figure 8. Data# Polling Algorithm .................................................. 39

Word/Byte Configuration ........................................................ 11

VersatileIO™ (V

) Control ........................................................... 11

Requirements for Reading Array Data ......................................... 12

Page Mode Read .................................................................... 12

Writing Commands/Command Sequences .................................. 12

Write Buffer ............................................................................. 12

Accelerated Program Operation ............................................. 12

Autoselect Functions .............................................................. 12

Standby Mode ........................................................................ 12

Automatic Sleep Mode ................................................................. 13

RESET#: Hardware Reset Pin ..................................................... 13

Output Disable Mode ................................................................... 13

Table 2. Sector Address Table ..............................................................14

RY/BY#: Ready/Busy#............................................................ 40

DQ6: Toggle Bit I .......................................................................... 40

Figure 9. Toggle Bit Algorithm........................................................ 41

DQ2: Toggle Bit II ......................................................................... 41

Reading Toggle Bits DQ6/DQ2 .................................................... 41

DQ5: Exceeded Timing Limits ...................................................... 42

DQ3: Sector Erase Timer ............................................................. 42

DQ1: Write-to-Buffer Abort ........................................................... 42

Table 12. Write Operation Status ......................................................... 43

Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 44

Figure 10. Maximum Negative Overshoot Waveform ................... 44

Figure 11. Maximum Positive Overshoot Waveform..................... 44

Autoselect Mode..................................................................... 20

Table 3. Autoselect Codes, (High Voltage Method) .............................20

Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 44

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 45

Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Figure 12. Test Setup.................................................................... 46

Table 13. Test Specifications ......................................................... 46

Sector Group Protection and Unprotection .................................. 21

Table 4. Sector Group Protection/Unprotection Address Table .....21

Key to Switching Waveforms. . . . . . . . . . . . . . . . 46

Figure 13. Input Waveforms and Measurement Levels ................. 46

Write Protect (WP#)................................................................ 22

Temporary Sector Group Unprotect ............................................. 22

Figure 1. Temporary Sector Group Unprotect Operation................ 22

Figure 2. In-System Sector Group Protect/Unprotect Algorithms ... 23

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 47

Read-Only Operations ........................................................... 47

Figure 14. Read Operation Timings ............................................... 47

Figure 15. Page Read Timings ...................................................... 48

Secured Silicon Sector Flash Memory Region ............................. 24

Table 5. Secured Silicon Sector Contents ......................................24

Figure 3. Secured Silicon Sector Protect Verify .............................. 25

Hardware Reset (RESET#) .................................................... 49

Figure 16. Reset Timings ............................................................... 49

Hardware Data Protection ............................................................ 25

Erase and Program Operations .............................................. 50

Figure 17. Reset Timings ...............................................................

Figure 18. Program Operation Timings..........................................

Figure 19. Accelerated Program Timing Diagram..........................

Figure 20. Chip/Sector Erase Operation Timings ..........................

Figure 21. Data# Polling Timings (During Embedded Algorithms).

Figure 22. Toggle Bit Timings (During Embedded Algorithms)......

Figure 23. DQ2 vs. DQ6.................................................................

Low VCC Write Inhibit ............................................................ 25

Write Pulse “Glitch” Protection ............................................... 25

Logical Inhibit .......................................................................... 25

Power-Up Write Inhibit ............................................................ 25

Common Flash Memory Interface (CFI) . . . . . . . 25

Table 6. CFI Query Identification String .............................. 26

Table 7. System Interface String......................................................26

Temporary Sector Group Unprotect ....................................... 56

Figure 24. Temporary Sector Group Unprotect Timing Diagram ... 56

Figure 25. Sector Group Protect and Unprotect Timing Diagram .. 57

Table 8. Device Geometry Definition................................... 27

Table 9. Primary Vendor-Specific Extended Query............. 28

Command Definitions . . . . . . . . . . . . . . . . . . . . . 29

Reading Array Data ...................................................................... 29

Reset Command .......................................................................... 29

Autoselect Command Sequence .................................................. 29

Enter Secured Silicon Sector/Exit Secured Silicon Sector

Command Sequence ................................................................... 30

Word Program Command Sequence ........................................... 30

Unlock Bypass Command Sequence ..................................... 30

Write Buffer Programming ...................................................... 30

Accelerated Program .............................................................. 31

Figure 4. Write Buffer Programming Operation............................... 32

Figure 5. Program Operation .......................................................... 33

Alternate CE# Controlled Erase and Program Operations ..... 58

Figure 26. Alternate CE# Controlled Write (Erase/Program)

Operation Timings.......................................................................... 59

Program Suspend/Program Resume Command Sequence ........ 33

Figure 6. Program Suspend/Program Resume............................... 34

Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 59

Erase And Programming Performance. . . . . . . . 60

TSOP Pin and BGA Package Capacitance . . . . . 61

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 62

TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline

Package (TSOP) ..................................................................... 62

LAA064—64-Ball Fortified Ball Grid Array

13 x 11 mm Package .............................................................. 63

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 64

Chip Erase Command Sequence ................................................. 34

January 31, 2007 25270C7

Am29LV128MH/L

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