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KBP2005G_11

Description
2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size294KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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KBP2005G_11 Overview

2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

KBP2005G ~ KBP210G
Elektronische Bauelemente
Voltage 50V ~ 1000V
2.0Amp Glass Passivited Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
KBP
G
A
BE
Surge overload rating -60amperes peak
Ideal for printed circuit board
The plastic material has UL flammability
classification 94V-0
Mounting position: Any
DK
K J
F
C
L
H
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
14.22
15.24
10.67
11.68
4.57
5.08
16.25
-
11.68
12.70
0.76
0.86
REF.
G
H
J
K
L
Millimeter
Min.
Max.
3.0 x 45°
1.15
1.35
12.7
-
-
1.52
3.60
4.10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Maximum Average Forward Rectified
Current @T
A
=50°C
Peak Forward Surge Current 8.3 ms Single
Half Sine-Wave Super Imposed on Rated
Load (JEDEC Method)
Maximum Forward Voltage Drop
Per Bridge Element at 2.0A Peak
Maximum Reverse Current at Rated
DC Blocking Voltage per Element
Maximum Reverse Current at Rated
DC Blocking Voltage per Element
@T
j
=100℃
Operating and Storage temperature range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
KBP
2005G
KBP
201G
KBP
202G
KBP
204G
KBP
206G
KBP
208G
KBP
210G
Unit
V
V
V
A
A
V
μA
mA
°C
50
35
50
100
70
100
200
140
200
400
280
400
2.0
60
1.1
10
600
420
600
800
560
800
1000
700
1000
I
R
1
T
J
, T
STG
-55 ~ 150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Mar-2011 Rev. C
Page 1 of 2

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