KSD471A
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
4.55
±0.2
3.5
±0.2
4.5
±0.2
14.3
±0.2
FEATURES
Complement to KSB564A
Collector Current : I
C
= 1A
Collector Dissipation : P
C
= 800mW
0.43
+0.08
0.46
±0.1
…0.07
MAXIMUM RATINGS (T
A
=25
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
unless otherwise noted)
Value
40
30
5
1
0.8
150
-55-150
Units
V
V
V
A
W
℃
℃
1 2 3
2.54
±0.1
Parameter
(1.27 T yp.)
1.25
±0.2
1: E mitter
2: B as e
3: C ollector
Collector Current -Continuous
Collector Power Dissipation
T
j
T
stg
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
Cob
f
T
Test
conditions
MIN
40
30
5
0.1
70
400
0.5
1.2
16
130
V
V
pF
MHz
TYP
MAX
UNIT
V
V
V
μA
I
C
=100uA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=30V, I
E
=0
V
CE
=1V, I
C
=100mA
I
C
=1A, I
B
=0.1A
I
C
=1A, I
B
=0.1A
V
CB
=6V, I
E
=0,f=1MH
Z
V
CE
=6V, I
C
=10mA
CLASSIFICATION OF h
FE
Rank
Range
O
70-140
Y
120-240
G
200-400
http://www.SeCoSGmbH.com/
01-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of
2
KSD471A
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page
2
of2
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