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2SB922R

Description
TRANSISTOR,BJT,PNP,80V V(BR)CEO,12A I(C),TO-218VAR
CategoryDiscrete semiconductor    The transistor   
File Size29KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SB922R Overview

TRANSISTOR,BJT,PNP,80V V(BR)CEO,12A I(C),TO-218VAR

2SB922R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Maximum collector current (IC)12 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)80 W
surface mountNO
Nominal transition frequency (fT)20 MHz
Base Number Matches1
Ordering number : ENN1429A
2SB922 / 2SD1238
PNP / NPN Epitaxial Planar Silicon Transistors
2SB922 / 2SD1238
Large Current Switching Applications
Applications
Package Dimensions
unit : mm
2022A
[2SB922 / 2SD1238]
3.5
15.6
14.0
2.6
3.2
4.8
2.0
Large current switching of relay drivers, high-speed
inverters, converters.
Features
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.4
1.3
1.2
15.0
20.0
Low collector-to-emitter saturation voltage :
VCE(sat)=-
-0.5V (PNP), 0.4V (NPN) max.
Wide ASO and highly resistant to breakdown.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
5.45
5.45
Specifications
( ) : 2SB922
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)120
(--)80
(--)6
(--)12
(--)20
80
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)80V, IE=0
VEB=(--)4V, IC=0
Ratings
min
typ
max
(--)0.1
(--)0.1
Unit
mA
mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502 TS IM 8-4747 No.1429-1/4

2SB922R Related Products

2SB922R 2SD1238Q 2SB922Q
Description TRANSISTOR,BJT,PNP,80V V(BR)CEO,12A I(C),TO-218VAR TRANSISTOR,BJT,NPN,80V V(BR)CEO,12A I(C),TO-218VAR TRANSISTOR,BJT,PNP,80V V(BR)CEO,12A I(C),TO-218VAR
Reach Compliance Code unknow compli unknow
Maximum collector current (IC) 12 A 12 A 12 A
Configuration Single Single Single
Minimum DC current gain (hFE) 100 70 70
Maximum operating temperature 140 °C 140 °C 140 °C
Polarity/channel type PNP NPN PNP
Maximum power dissipation(Abs) 80 W 80 W 80 W
surface mount NO NO NO
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz
Base Number Matches 1 1 1
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