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2SB1106

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size117KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SB1106 Overview

Transistor

2SB1106 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1106
DESCRIPTION
・With
TO-220C package
・DARLINGTON
・High
DC durrent gain
・Complement
to type 2SD1606
APPLICATIONS
・Designed
for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
固电
IN
导½
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-120
-120
-7
-6
UNIT
V
V
V
A
W
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
40
150
-55~150
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