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2SB1110C

Description
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126MOD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size36KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SB1110C Overview

Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126MOD, 3 PIN

2SB1110C Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)1.25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
Base Number Matches1
2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610
Outline
TO-126 MOD
1
2
1. Emitter
2. Collector
3. Base
3
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SB1109
–160
–160
–5
–100
1.25
150
–45 to +150
2SB1110
–200
–200
–5
–100
1.25
150
–45 to +150
Unit
V
V
V
mA
W
°C
°C
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